BSP299
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
•
V
GS(th)
= 2.1 ... 4.0 V
• Pb-free lead plating; RoHS compliant
•
Qualified according to AEC Q101
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
V
DS
500 V
Pb-free
Yes
I
D
0.4 A
R
DS(on)
4
Ω
Package
Marking
BSP 299
Type
BSP 299
SOT-223
BSP299
Tape and Reel Information
L6327
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
A
= 25 °C
I
D
A
0.4
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
1.6
E
AS
Avalanche energy, single pulse
I
D
= 1.2 A,
R
GS
= 25
Ω
T
j
= 25 °C
mJ
130
V
GS
P
tot
Gate source voltage
Power dissipation
T
A
= 25 °C
±
20
1.8
V
W
ESD Class
JESD22-A114-HBM
Class 1b
Rev
2.3
1
2011-06-01
BSP299
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
Therminal resistance, junction-soldering point
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJA
R
thJS
-55 ... + 150
-55 ... + 150
°C
≤
70
≤
25
E
55 / 150 / 56
K/W
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Values
typ.
max.
Unit
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 0 °C
V
(BR)DSS
V
500
-
-
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
2.1
I
DSS
3
4
µA
Zero gate voltage drain current
V
DS
= 500 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 500 V,
V
GS
= 0 V,
T
j
= 125 °C
-
-
I
GSS
0.1
10
1
100
nA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
-
R
DS(on)
10
100
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 0.4 A
Ω
-
3.1
4
Rev
2.3
2
2011-06-01
BSP299
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Values
typ.
max.
Unit
Transconductance
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 0.4 A
g
fs
S
0.3
1.2
-
pF
-
300
400
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
iss
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
oss
-
C
rss
40
60
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
-
t
d(on)
15
25
ns
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
Ω
-
t
r
8
12
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
Ω
-
t
d(off)
15
22
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
Ω
-
t
f
55
70
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
Ω
-
30
40
Rev 2.3
3
2011-06-01
BSP299
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Values
typ.
max.
Unit
Inverse diode continuous forward current
T
A
= 25 °C
I
S
A
-
-
0.4
Inverse diode direct current,pulsed
T
A
= 25 °C
I
SM
-
V
SD
-
1.6
V
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.8 A,
T
j
= 25 °C
-
t
rr
0.9
1.2
ns
Reverse recovery time
V
R
= 100 V,
I
F=
l
S,
d
i
F
/d
t
= 100 A/µs
-
Q
rr
300
-
µC
Reverse recovery charge
V
R
= 100 V,
I
F=
l
S,
d
i
F
/d
t
= 100 A/µs
-
2.5
-
Rev
2.3
4
2011-06-01
京公网安备 11010802033920号
EEWORLD
