RA45200 Series
Silicon
Abrupt Junction
runing Varactors
Features
30
U
•
•
•
•
•
•
HIGH 0
LOW LEAKAGE
AVAILABLE IN CHIP FORM
AVAILABLE IN CERAMiC PACKAGES
CUSTOM DESIGNS AVAiLABLE
LOW POST TUNING DRIFT
FREQUENCY RANGE VHF
Ku-BAND
• CAN BE SCREENED TO TX, TXV
SPECIFICATIONS
—
Description
Fhe MA45200 series of silicon abrupt junction tuning
iaractors has been designed to obtain the highest Q
~ossible.Each- device in this series has a high density
silicon dioxide passivation which results in exceptionally
ow leakage currents and low post tuning drift. These
silicon abrupt junction tuning varactors, which have a high
Q, also exhibit large capacitance changes with bias
oltages. The capacitance change is approximately equal
to the square root of the voltage. The MA45200 series
diodes are available in a number of ceramic packages as
well as in chip form.
Applications
The MA45200 series of silicon tuning diodes is ideally
suited for frequency tuning applications through Ku band.
These devices are designed for use in solid state elec-
tronic tuning of transistor, Gunn and IMPATT oscillators.
u~ji
uua,q..,imunn
I
uinog
varaciors
Minimum3’7
Capacitance
Ratio
Cto/Ctvb
2.7
2.9
2.9
3.0
3.2
3.3
3.5
3.6
3.7
3.7
3.8
3.8
3.9
3.9
3.9
4.0
4.0
4.0
Minimum4
“0”
5500
5500
5000
4800
4800
4500
4000
4000
4000
3500
3500
3000
3000
3000
2700
2500
2200
2000
Nominal Characteristics
Frequency
Range
(GHz)
10-12
9-11
8-10
7-9
6-8
6-8
5-7
5-7
4-6
4-6
3-5
2-4
2-4
2-4
1-2
1-2
.5-1.0
.5-1.0
Availablel,7
Case Style
(Chip)
132
132
132
132
132
132
132
132
132
132
132
132
132
132
132
132
132
132
Model1
Number
MA45225
MA45226
MA45227
MA45228
MA45229
MA45230
MA45231
MA45232
MA45233
MA45234
MA45235
MA45236
MA45237
MA45238
MA45239
MA45240
MA45241
MA45242
Minimume
Vb
(Volts)
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Total2,7
Capacitance
(pF)
0.5
0.6
0.8
1.0
1.2
1.5
1.8
2.2
2.7
3.3
3.9
4.7
5.6
6.8
8.2
10.0
12.0
15.0
45 Volt Silicon Abrupt Junction Tuning Varactors
Modell
Number
Minimumo
Vb
(Volts)
Total2,?
Capacitance
(pF)
Minimum3’7
Capacitance
Ratio
Cto/Ctvb
Minimum4
“0”
Nominal Characteristics
Frequency
Range
(GHz)
Available1’7
Case Style
(Chip)
MA45245
MA45246
MA45247
MA45248
MA45249
MA45250
45
45
45
45
45
45
0.5
0.6
0.8
1.0
1.2
1.5
3.3
3.7
3.9
4.0
4.2
4.4
4000
4000
3800
3500
3500
3300
9-11
8-10
5-7
5-7
4-6
4-6
132
132
132
132
132
132
MA45251
MA45252
MA45253
45
45
45
1.8
2.2
2.7
4.6
4.8
5.5
3000
2700
2700
3-5
3-5
2-3
132
132
132
MA45254
MA45255
MA45256
MA45257
45
45
45
45
3.3
3.9
4.7
5.6
5.2
5.3
5.4
5.4
2400
2200
2000
2000
2-3
1.5-2.5
1.0-1.5
1.0-1.5
132
132
132
132
MA45258
MA45259
45
45
6.8
8.2
5.4
5.4
1800
1700
1.0-1.5
1.0-1.5
132
132
NOTES
1. case style 30 is the standard enclosure for this series. On special order,
these devices are also available in other case styles including 31, 94, 96,
108, and in chip form. To order the MA45200 series in chip form or other
case styles, add the designated available case number as a suffix to the
model number, i.e., MA45229-132 is a chip or MA45229-96 is in the 96
case style.
2. Total capacitance is measured at 1 MHz and —4 volts. The standard
capacitance is ±10%. A tighter tolerance ±5%may be obtained, at an
additional cost, by adding the suffix ‘A’ to the basic model number.
3. The total capacitance ratio will vary with different packages due to dif-
ferences in package parasitic capacitance.
4. Diode 0 at —4 volts is determined at 1.0 GHz and extrapolated to 50 MHz
by:
1
04 = 2nf CJ..4 R
5
5. Reverse leakage current is measured at 800/0 of the minimum breakdown
voltage and will be 20 nanoamperes maximum.
6. Reverse leakage is 10 microamperes maximum at minimum breakdown
voltage.
7. The total capacitance and capacitance ratios shown are for diodes housed
in case style 30. Other cases and chip styles will result in slightly different
values.
M/A-COM, Inc.
U
43 South Aye, Burlington, MA 01803
U
800-366-2266
144
MA45200 Series
—
Silicon Abrupt Junction Tuning Varactors
Specifications @ TA
Model’
Number
MA45260
MA45261
MA45262
MA45263
MA45264
MA45265
MA45266
MA45267
MA45268
MA45269
MA45270
MA45271
MA45272
MA45273
MA45274
MA45275
MA45276
MA45277
MA45278
MA45279
MA45280
Minimum6
Vb
(Volts)
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
=
60 Volt Silicon Abrupt Junction Tuning Varactors
Total2’7
Capacitance
(pF)
0.6
0.8
1.0
1.2
1.5
1.8
2.2
2.7
3.3
3.9
4.7
5.6
6.8
8.2
10.0
12.0
15.0
18.0
22.0
27.0
33.0
Minimum3’7
Capacitance
Ratio
Cto/Ctvb
4.5
4.5
4.8
5.2
5.6
5.9
6.0
6.2
6.3
6.4
6.5
6.5
6.5
6.8
7.0
7.0
7.2
7.2
7.4
7.4
7.4
250C (Cont’d)
Nominal Characteristics
Minimum4
“a”
2500
2300
2200
2000
1800
1800
1700
1700
1600
1500
1400
1400
1200
1200
1000
1000
900
900
800
800
700
Frequency
Range
(GHz)
4-6
4-6
4-6
2-4
2-4
2-4
1.5-2.0
1.5-3.0
1.5-3.0
1.0-2.0
1.0-2.0
1.0-2.0
0.5-1.0
0.5-1.0
0.5-1.0
0.5-1.0
0.25-0.50
0.25-0.50
0.25-0.50
0.10-0.25
0.10-0.25
Available”7
Case Style
(Chip)
132
132
132
132
132
132
132
132
132
132
132
132
132
132
132
131
131
131
131
131
131
90 Volt Silicon Abrupt Junction Tuning Varactors
Modell
Number
MA45290
MA45291
MA45292
MA45293
MA45294
MA45295
MA45296
MA45297
MA45298
MA45299
See notes on previous page.
Nominal Characteristics
Minimum4
“Q”
1500
1200
1100
Minimum6
Vb
(Volts)
90
90
90
90
90
90
90
90
90
90
Total2’7
Capacitance
(pF)
1.0
1.2
1.5
1.8
2.2
2.7
3.3
3.9
4.7
5.6
Minimum3’7
Capacitance
Ratio
Cto/CtVb
6.0
6.5
7.0
7.3
7.5
7.8
8.0
8.3
8.5
8.8
Frequency
Range
(GI-lz)
2.0-4.0
2.0-4.0
2.0-4.0
Available”7
Case Style
(Chip)
132
132
132
1000
900
900
800
800
700
600
2.0-4.0
1.5-3.0
1.5-3.0
1.0-2.0
1.0-2.0
1.0-2.0
0.5-1.0
132
132
132
132
132
132
132
MAXIMUM RATINGS
Reverse Voltage
Operating Temperature
Storage Temperature
Temperature Coefficient
Power Dissipation
Storage Temperature
(derate linearly to zero at 1 500C)
ENVIRONMENTAL PERFORMANCE
Same as rated breakdown Vb
~650C
+
15000
to
~650C
to
+
20000
300 ppm/00 at
+
4 Volts
~650C
to
+ 20000
<1.0 pF © 100mW
1.0 pF © 200mW
-
All tuning varactors in the MA45200 series are capable of
meeting the performance tests dictated by the methods
and procedures of the latest revisions of MIL-S-19500,
MIL-STD-202 and MIL-STD-750 which specify mechanical,
electrical, thermal and other environmental tests common to
semiconductor products.
HIGH RELIABILITY PARTS
All diodes in the MA45200 series may be screened to TX,
TXV specification.
30
31
94
96
108
131
132
M/A-COM, Inc.
146
U
43 South Aye, Burlington, MA 01803
U
800-366-2266
MA45200 Series
—
Silicon Abrupt Junction Tuning Varactors
Typical Performance Curves
10
9
8
7
6
5
4
U
0
U
I 11111
I 11111
1/N ~ .47
9
8
7
6
—
..—~—
—
—
FMAX
FMIN
cMAX
CMIN
-1—I—I-—H—
z
5
4
-
3
——~1—
100
u.
x
u.
-
THIS CURVE DOES NOT TAKE SPECIFIC
CIRCUIT CONSIDERATIONS INTO
ACCOUNT AND THUS REFLECTS ONLY
POTENTIAL DEVICE PERFORMANCE
2
2
1
10
REVERSE BIAS VOLTAGE (VOLTS)
1
2
3
45678910
CMAX/CMIN
FIGURE 1. Typical Capacitance Change Ratios for Silicon
Tuning Varactor Chips
10,000
FIGURE 2. Frequency Tuning Ratio as a Function of
Capacitance Change Ratio
C.,
0.
0~
0
2
4
6
8
10
12
14
REVERSE VOLTAGE (VOLTS)
16
FIGURE 3. Typical Temperature Coefficient of Silicon
Varactors
ii~
9
8
I
Cp.15PF
= 0.7 VOLTS
1/N=
6
5
46
2
IP
I
—
—
—h—h-I-h
UNPACKAGFr
U
I-
0
I-
U
I—
U
0
I-
4———
——
——
CT.
4 = 1.OpF
2—
—
= 0.5 pF
U
1—--
1
10
REVERSE BIAS VOLTAGE (VOLTS)
100
1
10
REVERSE BIAS VOLTAGE (VOLTS)
100
FIGURE 4. Typical Capacitance Change Ratios for Silicon
Tuning Varactors in Case Styles 30, 31 & 108
FIGURE 5. Typical Capacitance Change Ratios for Silicon
Tuning Varactors in Case Styles 94 and 96
FPGA/CPLD
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