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FJD3076Y

Description
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size28KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

FJD3076Y Overview

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3

FJD3076Y Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
FJD3076
FJD3076
Power Amplifier Applications
• Low Collector-Emitter Saturation Voltage
• Complement to KSA 1241
1
D-PACK
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
50
50
5
2
1
1
10
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Test Condition
I
C
= 10mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 1.5A
I
C
= 1A, I
B
= 0.05A
I
C
= 1A, I
B
= 0.05A
V
CE
= 2V, I
C
= 0.5A
V
CB
= 10V, f = 1MHz
V
CC
= 30V, I
C
= 1A
1
B1
= - I
B2
= 0.05A
R
L
= 30Ω
100
30
0.1
1
0.1
70
40
Min.
50
Typ.
Max.
1
1
240
0.5
1.2
V
V
MHz
pF
µs
µs
µs
Units
V
µA
µA
h
FE1
Classification
Classification
h
FE1
O
70 ~ 140
Y
120 ~ 240
©2001 Fairchild Semiconductor Corporation
Rev. A, Octorber 2001

FJD3076Y Related Products

FJD3076Y FJD3076O
Description Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3 Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 2 A 2 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 120 70
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 1 W 1 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
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