HIGH Q/LOW ESR MULTILAYER CERAMIC CHIP CAPACITORS
- GHQ SERIES -
SCOPE
-
Used at high frequencies, small temperature coefficient of
capacitance, typical within +/-30ppm/C required for NPO
(COG) classification.
-
Excellent conductivity internal electrode
FEATURES
-
High Q and low ESR performance at high frequency.
-
Quality improvement of telephone calls for low power
loss and better performance
APPLICATIONS
-
Mobile telecommunication; mobile phones, WLAN
-
RF module: power amplifier, VCO
-
Tuners
CONSTRUCTION AND DIMENSIONS
L
T
SIZE
INCH
(MM)
0201 (0603)
0402 (1005)
0603 (1608)
(MM)
L
(MM)
W
(MM)
T
REMARK
#
#
(MM)
M
B
0.6±0.03
1.00±0.05
1.60±0.10
1.60±0.15/-0.10
2.00±0.15
0.3±0.03
0.50±0.05
0.80±0.10
0.3±0.03
0.50±0.05
0.80±0.07
0.60±0.10
0.15±0.05
0.25+0.05/-0.10
0.40±0.15
W
0.80±0.15/-0.10 0.80±0.15/-0.10
1.25±0.10
0.80±0.10
1.25±0.10
#
0805 (2012)
0.50±0.20
M
a
M
a
#Reflow soldering only is recommended
NO.
1
2
3
4
5
NAME
Ceramic Material
Inner electrode
Inner layer
Termination
Middle layer
Outer layer
NP0
CaZrO
3
Ni
Cu
Ni
Sn
1
2
4
5
3
ORDERING INFORMATION
GHQ
PRODUCT TYPE
10
SIZE
02 - 0201 (0603)
04 - 0402 (1005)
10 - 0603 (1608)
21 - 0805 (2012)
CG
DIELECTRIC
CG - NPO (C0G)
101
CAPACITANCE
Two significant
digits followed
by no of zeros.
Use R in place of
decimal point.
J
TOLERANCE
A: ± 0.05pF
B: ± 0.1pF
C: ± 0.25pF
D: ± 0.5pF
F: ± 1%
G: ± 2%
J: ± 5%
100
RATED VOLTAGE
25 - 25 VDC
50 - 50 VDC
100 - 100 VDC
200 - 200 VDC
250 - 250 VDC
500 - 500 VDC
630 - 630 VDC
N
TERMINATION
N: Cu/Ni/Sn
T
PACKAGING
T: 7” reel
TD: 13”reel
1
CAPACITANCE RANGE
DIMENSION (MM)
L(L1)
W
BW(L2/L3)
Dielectric
H (max)
Rated Voltage
Cap. Range
0.3pF
0.4pF
0.5
0.6
0.7
0.8
0.9
1
1.2
1.5
1.8
2.2
2.7
3.3
3.9
4.7
5.6
6.8
8.2
10pF
12
15
18
22
27
33
39
47
56
68
82
100
120
150
180
220
270
330
390
470
560
680
820
1000
1200
1500
1800
2200
2700
3300
0R3
0R4
0R5
0R6
0R7
0R8
0R9
1R0
1R2
1R5
1R8
2R2
2R7
3R3
3R9
4R7
5R6
6R8
8R2
100
120
150
180
220
270
330
390
470
560
680
820
101
121
151
181
221
271
331
391
471
561
681
821
102
122
152
182
222
272
332
GHQ02
0.6+/-0.03
GHQ04
1.00±0.05
0.50±0.05
0.25+0.05/-0.10
COG
0.55
25
GHQ10
1.60±1.0
0.80±0.10
1.60+0.15/-0.10
0.80+0.15/-0.10
COG
0.87
50
16
25
50
0.95
100
50
0.9
100
0.40±0.15
GHQ21
2.00±0.15
1.25±0.10
0.50±0.20
COG
1.35
200
250
500
630
0.3+/-0.03
0.15+/-0.05
NP0
0.33
10
16
16
25
1.
0402, Capacitance <0.5pF, on request
2.
For more information about products with special capacitance or other data, please contact your Cal-Chip Sales Representative
2
GENERAL ELECTRICAL DATA
DIALECTRIC
SIZE
CAPACITANCE RANGE
NP0
0201, 0402, 0603, 0805
0201: 0.1pF to 3300pF
0402: 0.5pF to 470pF**
0603: 0.5pF to 3300pF
0805: 0.5pF to 390pF
Cap≤5pF: A(±0.05PF), B (±0.1pF), C (±0.25pF)
5pF<Cap<10pF: C (±0.25pF), D (±0.5pF)
Cap≥10pF: F (±1%), G (±2%), J (±5%)
16V, 25V, 50V, 100V, 200V, 250V, 500V, 630V
Cap<30pF: Q≥400+20C
Cap:≥30pF: Q≥1000
≥10GΩ or RxC≥100Ω - F whichever is smaller
-55° to +125°C
±30ppm/°C
Ni/Sn (lead-free termination)
CAPACITANCE TOLERANCE**
RATED VOLTAGE (WVDC)
Q*
INSULATION RESISTANCE AT UR
OPERATING TEMPERATURE
CAPACITANCE CHARACTERISTIC
TERMINATION
#1: NP0, 0.1pF product only provide B tolerance
*Measured at the condition of 25°C ambient temperature 30~70% related humidity.
Apply 1.0±0.2Vrms, 1.0MHz±10% for Cap≤1000pF and 1.0±0.2Vrms, 1.0kHz±10% for Cap>1000pF.
**0402, Capacitance <0.5pF: On request.
GENERAL ELECTRICAL CHARACTERISTICS
ESR vs FREQUENCY 0201
1.000
1.000
ESR vs FREQUENCY 0402
0.100
0.100
0.010
100
1,000
FREQUENCY (MHz)
0.010
10,000
100
1,000
FREQUENCY (MHz)
10,000
Q vs FREQUENCY 0201
10,000
10,000
Q vs FREQUENCY0402
1,000
1,000
100
100
10
10
1
100
1,000
FREQUENCY (MHz)
1
10,000
100
1,000
FREQUENCY (MHz)
10,000
3
Embedded System
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