KSC2310
KSC2310
High Voltage Power Amplifier
• Collector-Base Voltage : V
CBO
=200V
• Current Gain Bandwidth Product : f
T
=100MHz
1
TO-92L
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
200
150
5
50
800
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=100µA, I
E
=0
I
C
=5mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=200V, I
E
=0
V
CE
=5V, I
C
=10mA
I
C
=10mA, I
B
=1mA
V
CE
=30V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
100
3.5
5
40
Min.
200
150
5
0.1
240
0.5
V
MHz
pF
Typ.
Max.
Units
V
V
V
µA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2310
Typical Characteristics
50
I
B
= 1000
µ
A
I
B
= 500
µ
A
I
B
= 400
µ
A
1000
V
CE
= 5V
I
C
[mA], COLLECTOR CURRENT
40
30
I
B
= 200
µ
A
I
B
= 150
µ
A
I
B
= 100
µ
A
h
FE
, DC CURRENT GAIN
I
B
= 300
µ
A
100
20
10
0
0
2
4
6
8
10
12
10
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
1000
I
C
= 10 I
B
V
CE
= 30V
1
V
BE
(sat)
100
0.1
V
CE
(sat)
10
0.01
0.1
1
10
100
1
0.1
1
10
100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Current Gain Bandwidth Product
1000
1.6
I
C
[mA], COLLECTOR CURRENT
1. T
a
=25 C
2. *Single Pulse
o
1.4
P
C
[W], POWER DISSIPATION
100
1000
*300ms
100
1.2
1.0
DC
0.8
10
0.6
0.4
0.2
1
1
10
0.0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
a
[ C], AMIBIENT TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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intended to be an exhaustive list of all such trademarks.
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®
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2
CMOS™
E
HiSeC™
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I
2
C™
Across the board. Around the world.™
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®
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®
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®
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®
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
Embedded System
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