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DDTC115GE-7

Description
trans prebias npn 150mw sot523
Categorysemiconductor    Discrete semiconductor   
File Size135KB,3 Pages
ManufacturerAll Sensors
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DDTC115GE-7 Overview

trans prebias npn 150mw sot523

DDTC115GE-7 Parametric

Parameter NameAttribute value
Datasheets
DDTC - R2-Only Series - E
Product Photos
SOT-523
Catalog Drawings
SOT-523 Side
SOT-523 T
DDTCxxxG(CA,UA,E) Circui
PCN Design/Specificati
Green Encapsulate Change 09/July/2007
Standard Package3,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
PackagingTape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)-
Resistor - Emitter Base (R2) (Ohms)100k
DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA (ICBO)
Frequency - Transiti250MHz
Power - Max150mW
Mounting TypeSurface Mou
Package / CaseSOT-523
Supplier Device PackageSOT-523
Other NamesDDTC115GE7
DDTC (R2-ONLY SERIES) E
NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Types Available (DDTA)
Built-In Biasing Resistor, R2 only
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
SOT-523
A
C
TOP VIEW
B
G
H
K
M
E
B C
Dim
A
B
C
D
G
H
J
N
Min
0.15
0.75
1.45
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
Mechanical Data
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Terminal Connections: See Diagram
Marking Information: See Table Below & Page 2
Ordering Information: See Page 2
Weight: 0.002 grams (approximate)
P/N
DDTC114GE
DDTC124GE
DDTC144GE
DDTC115GE
R1 (NOM)
10KΩ
22KΩ
47KΩ
100KΩ
Marking
N26
N27
N28
N29
K
L
M
N
J
D
L
α
All Dimensions in mm
C
B
R
2
E
SCHEMATIC DIAGRAM
Maximum Ratings
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
(Max)
P
d
R
θ
JA
T
J,
T
STG
Value
50
50
5
100
150
833
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Notes:
1.
2.
3.
4.
Mounted on FR4 PC Board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30316 Rev. 8 – 2
1 of 3
www.diodes.com
DDTC (R2-ONLY SERIES) E
© Diodes Incorporated

DDTC115GE-7 Related Products

DDTC115GE-7 DDTC144GE-7
Description trans prebias npn 150mw sot523 trans prebias npn 150mw sot523
Standard Package 3,000 3,000
Category Discrete Semiconductor Products Discrete Semiconductor Products
Family Transistors (BJT) - Single, Pre-Biased Transistors (BJT) - Single, Pre-Biased
Packaging Tape & Reel (TR) Tape & Reel (TR)
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Resistor - Emitter Base (R2) (Ohms) 100k 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 5mA, 5V 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA (ICBO) 500nA (ICBO)
Frequency - Transiti 250MHz 250MHz
Power - Max 150mW 150mW
Mounting Type Surface Mou Surface Mou
Package / Case SOT-523 SOT-523
Supplier Device Package SOT-523 SOT-523
Other Names DDTC115GE7 DDTC144GE7
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