BD375/377/379
BD375/377/379
Medium Power Linear and Switching
Applications
• Complement to BD376, BD378 and BD380 respectively
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: BD375
: BD377
: BD379
1
TO-126
2.Collector
3.Base
1. Emitter
Value
50
75
100
45
60
80
5
2
3
1
25
150
- 55 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
V
CEO
Collector-Emitter Voltage : BD375
: BD377
: BD379
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD375
: BD377
: BD379
Collector-Base
Breakdown Voltage
Collector Cut-off Current
: BD375
: BD377
: BD379
: BD375
: BD377
: BD379
Test Condition
I
C
= 100mA, I
B
= 0
Min.
45
60
80
50
75
100
2
2
2
100
40
20
375
1
1.5
50
500
V
V
ns
ns
Typ.
Max.
Units
V
V
V
V
V
V
µA
µA
µA
µA
BV
CBO
I
C
= 100µA, I
E
= 0
I
CBO
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 0.15A
V
CE
= 2V, I
C
= 1A
I
C
= 1A, I
B
= 0.1A
V
CE
= 2V, I
C
= 1A
V
CC
= 30V, I
C
= 0.5A
I
B1
= - I
B2
= 0.05A
R
L
= 60Ω
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
t
ON
t
OFF
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Turn ON Time
Turn OFF Time
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
h
FE
Classification
Classification
h
FE1
©2000 Fairchild Semiconductor International
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
25
150 ~ 375
Rev. A, February 2000
BD375/377/379
Typical Characteristics
100
500
80
400
h
FE
, DC CURRENT GAIN
60
300
I
C
= 20 . I
B
0.01
0.1
1
V
CE
= -2V
V
CE
(sat)(mV), SATURATION VOLTAGE
40
200
20
100
0
10
100
1000
0
1E-3
I
C
= 1
0.I
B
10
I
C
[mA], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
1.1
10
V
BE
(V), BASE EMITTER VOLTAGE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1E-3
0.01
0.1
I
C
[A], COLLECTOR CURRENT
t)
(sa
I
B
V
BE
10.
Ic =
)
(on
V
V
BE
=5
V
CE
I
C
MAX. (Continuous)
1
L
S/b
ED
IMIT
0.1
0.01
0.1
1
10
1
10
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Voltage
Figure 4. Safe Operating Area
40
35
P
C
[W], POWER DISSIPATION
30
25
20
15
10
5
0
0
25
50
o
75
100
125
150
175
200
Tc[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
V
CEO
MAX.
100
BD379
BD377
BD375
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®
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®
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
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