BCR153...
PNP Silicon Digital Transistor
•
Switching circuit, inverter, interface circuit,
driver circuit
•
Built in resistor (R
1
=2.2kΩ,
R
2
=2.2kΩ)
•
BCR153U: Two internally isolated
transistors with good matching
in one multichip package
BCR153F/L3
BCR153T
C
3
R
1
R
2
1
B
2
E
EHA07183
Type
BCR153F
BCR153L3
BCR153T
Marking
WBs
WB
WB
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
Package
TSFP-3
TSLP-3-4
SC75
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation
BCR153F,
T
S
≤
128°C
BCR153L3,
T
S
≤
135°C
BCR153T,
T
S
≤
109°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
250
250
250
150
-65 ... 150
°C
Value
50
50
20
10
100
mA
mW
Unit
V
1
2006-05-10
BCR153...
Thermal Resistance
Parameter
Junction - soldering point
1)
BCR153F
BCR153L3
BCR153T
Symbol
R
thJS
Value
≤
90
≤
60
≤
165
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
50
V
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R
1
R
1
/
R
2
50
-
-
20
-
0.8
0.8
1.5
0.9
-
-
-
-
-
-
-
-
-
2.2
1
200
3
-
100
3.5
-
0.3
1.5
2.5
2.9
1.1
-
-
Collector-base cutoff current
V
CB
= 40 V,
I
E
= 0
nA
mA
-
V
Emitter-base cutoff current
V
EB
= 10 V,
I
C
= 0
DC current gain
2)
I
C
= 20 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
2)
I
C
= 20 mA,
I
B
= 1 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on voltage
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
k
Ω
-
MHz
pF
f
T
C
cb
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2Pulse test: t < 300µs; D < 2%
2
2006-05-10
BCR153...
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 5V (common emitter configuration)
10
3
Collector-emitter saturation voltage
V
CEsat
=
ƒ
(I
C
),
h
FE
= 20
10
2
10
2
A
h
FE
10
1
I
C
10
1
10
0
10
-1 -4
10
-3
-2
10
10
A
10
-1
10
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1
I
C
V
CEsat
Input on Voltage
V
i
(on)
=
ƒ
(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
Input off voltage
V
i(off)
=
ƒ
(I
C
)
V
CE
= 5V (common emitter configuration)
10
-2
A
A
10
-3
10
-2
I
C
I
C
10
-4
10
-3
10
-5
10
-4 -1
10
0
1
10
10
V
10
2
10
-6
0.6
0.8
1
1.2
1.4
V
1.7
V
i(on)
V
i(off)
3
2006-05-10
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