KST5086/5087
KST5086/5087
Low Noise Transistor
3
2
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
1
SOT-23
1. Base 2. Emitter 3. Collector
Value
-50
-50
-3
-50
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
: KST5086
: KST5087
: KST5086
: KST5087
: KST5086
: KST5087
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
: KST5086
: KST5087
: KST5087
I
C
= -100µA, V
CE
= -5V
R
S
=3KΩ, f=1KHz
V
CE
= -5V, I
C
= -20mA
R
S
=10KΩ, f=10Hz to 15.7KHz
3
2
2
dB
dB
dB
V
CE
= -5V, I
C
= -100µA
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
= -10mA
I
C
= -10mA, I
B
= -1mA
I
C
= -10mA, I
B
= -1mA
V
CE
= -5V, I
C
= -500µA
f=20MHz
V
CB
= -5V, I
E
=0
f=100MHz
40
4
150
250
150
250
150
250
500
800
Test Condition
I
C
= -100µA, I
E
=0
I
C
= -1mA, I
B
=0
V
CB
= -20V, I
E
=0
Min.
-50
-50
-50
Max.
Units
V
V
nA
-0.3
-0.85
V
V
MHz
pF
Marking Code
Type
Mark
KST5086
2P
KST5087
2Q
Marking
2P
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KST5086/5087
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
-10
V
CE
= -5V
KST5087
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
100
KST5086
-1
V
BE
(sat)
10
-0.1
V
CE
(sat)
1
-0.1
-1
-10
-100
-0.01
-0.1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-100
100
I
C
[mA], COLLECTOR CURRENT
f = 100KHz
I
E
= 0
-10
C
ob
[pF], CAPACITANCE
-0.6
-0.8
-1.0
-1.2
V
CE
= -5V
10
-1
1
-0.1
-0.0
-0.2
-0.4
0.1
-1
-10
-100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Output Capacitance
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
V
CE
= -5V
100
10
1
-0.1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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