EEWORLDEEWORLDEEWORLD

Part Number

Search

KST4124MTF

Description
transistor npn 25v 200ma sot-23
CategoryDiscrete semiconductor    The transistor   
File Size26KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

KST4124MTF Online Shopping

Suppliers Part Number Price MOQ In stock  
KST4124MTF - - View Buy Now

KST4124MTF Overview

transistor npn 25v 200ma sot-23

KST4124MTF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 2.13
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Base Number Matches1
KST4124
KST4124
General Purpose Transistor
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Parameter
Value
30
25
5
200
350
150
Units
V
V
V
mA
mW
°C
Refer to KST3904 for graphs
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Test Condition
I
C
=10µA, I
E
=0
I
C
=1.0mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
=2mA
V
CE
=1V, I
C
=50mA
I
C
=50mA, I
B
=5.0mA
I
C
=50mA, I
B
=5.0mA
I
C
=10mA, V
CE
=20V
f=100MHz
V
CB
=5V, I
E
=0, f=1.0MHz
I
C
=100µA, V
CE
=5V
R
S
=1KΩ
f=10Hz to 15.7KHz
300
4
5
120
60
Min.
30
25
5
50
50
360
0.3
0.95
V
V
MHz
pF
dB
Max.
Units
V
V
V
nA
nA
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Marking
ZC
©2000 Fairchild Semiconductor International
Rev. A, February 2000

KST4124MTF Related Products

KST4124MTF
Description transistor npn 25v 200ma sot-23
Is it lead-free? Lead free
Is it Rohs certified? conform to
Reach Compliance Code unknow
ECCN code EAR99
Is Samacsys N
Other features BUILT-IN BIAS RESISTOR RATIO IS 2.13
Maximum collector current (IC) 0.2 A
Collector-emitter maximum voltage 25 V
Configuration SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 60
JESD-30 code R-PDSO-G3
JESD-609 code e3
Humidity sensitivity level 1
Number of components 1
Number of terminals 3
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type NPN
Maximum power dissipation(Abs) 0.35 W
Certification status Not Qualified
surface mount YES
Terminal surface Matte Tin (Sn)
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 300 MHz
Base Number Matches 1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2374  2013  623  1549  1729  48  41  13  32  35 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号