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SS9011GBU

Description
transistor npn 30v 30ma TO-92
CategoryDiscrete semiconductor    The transistor   
File Size36KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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SS9011GBU Overview

transistor npn 30v 30ma TO-92

SS9011GBU Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.03 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)72
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)2 MHz
SS9011
SS9011
AM Converter, AM/FM IF Amplifier
General Purpose Transistor
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
50
30
5
30
400
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
C
ob
f
T
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain Bandwidth Product
Noise Figure
Test Condition
I
C
= 100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
= 100µA, I
C
=0
V
CB
= 50V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
= 5V, I
C
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 5V, I
C
= 1mA
V
CB
= 10V, I
E
= 0
f = 1MHz
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 1.0 mA
f=1MHz, R
S
= 500Ω
0.65
150
28
90
0.08
0.7
1.5
370
2.0
4.0
Min.
50
30
5
100
100
198
0.3
0.75
V
V
pF
MHz
dB
Typ.
Max.
Units
V
V
V
nA
nA
h
FE
Classification
Classification
h
FE
D
28 ~ 45
E
39 ~ 60
F
54 ~ 80
G
72 ~ 108
H
97 ~ 146
I
132 ~ 198
©2002 Fairchild Semiconductor Corporation
Rev. A4, November 2002

SS9011GBU Related Products

SS9011GBU SS9011FBU SS9011HBU
Description transistor npn 30v 30ma TO-92 transistor npn 30v 30ma TO-92 transistor npn 30v 30ma TO-92
Is it Rohs certified? conform to conform to conform to
Maker Fairchild Fairchild Fairchild
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.03 A - 0.03 A
Collector-emitter maximum voltage 30 V - 30 V
Configuration SINGLE - SINGLE
Minimum DC current gain (hFE) 72 - 97
JEDEC-95 code TO-92 - TO-92
JESD-30 code O-PBCY-T3 - O-PBCY-T3
JESD-609 code e3 - e3
Number of components 1 - 1
Number of terminals 3 - 3
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape ROUND - ROUND
Package form CYLINDRICAL - CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT APPLICABLE - NOT APPLICABLE
Polarity/channel type NPN - NPN
Maximum power dissipation(Abs) 0.4 W - 0.4 W
Certification status Not Qualified - Not Qualified
surface mount NO - NO
Terminal surface Matte Tin (Sn) - Matte Tin (Sn)
Terminal form THROUGH-HOLE - THROUGH-HOLE
Terminal location BOTTOM - BOTTOM
Maximum time at peak reflow temperature NOT APPLICABLE - NOT APPLICABLE
transistor applications AMPLIFIER - AMPLIFIER
Transistor component materials SILICON - SILICON
Nominal transition frequency (fT) 2 MHz - 2 MHz
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