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BC635ZL1

Description
transistor npn GP 45v 1A TO-92
CategoryDiscrete semiconductor    The transistor   
File Size54KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC635ZL1 Overview

transistor npn GP 45v 1A TO-92

BC635ZL1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCASE 29-11, TO-226, 3 PIN
Contacts3
Manufacturer packaging codeCASE 29-11
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
BC635, BC637, BC639,
BC639−16
High Current Transistors
NPN Silicon
Features
http://onsemi.com
COLLECTOR
2
3
BASE
Symbol
V
CEO
BC635
BC637
BC639
Collector - Base Voltage
BC635
BC637
BC639
Emitter - Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
V
CBO
45
60
80
5.0
1.0
625
5.0
800
12
−55 to +150
Vdc
Adc
mW
mW/°C
mW
mW/°C
°C
1
2
3
45
60
80
Vdc
Value
Unit
Vdc
1
EMITTER
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
TO−92
CASE 29
STYLE 14
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC
63x
AYWW
G
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
= Device Code
x = 5, 7, or 9
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
BC63x
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
September, 2005 − Rev. 5
Publication Order Number:
BC635/D

BC635ZL1 Related Products

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Description transistor npn GP 45v 1A TO-92 transistor npn GP 80v 1A TO-92 transistor npn GP 45v 1A TO-92 transistor npn GP 45v 1A TO-92 transistor npn GP 80v 1A TO-92 transistor npn GP 45v 1A TO-92
Is it Rohs certified? incompatible incompatible conform to incompatible incompatible conform to
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
package instruction CASE 29-11, TO-226, 3 PIN CYLINDRICAL, O-PBCY-T3 CASE 29-11, TO-226, 3 PIN CASE 29-11, TO-226, 3 PIN CASE 29-11, TO-226, 3 PIN CASE 29-11, TO-226, 3 PIN
Contacts 3 3 3 3 3 3
Manufacturer packaging code CASE 29-11 CASE 29-11 CASE 29-11 CASE 29-11 CASE 29-11 CASE 29-11
Reach Compliance Code _compli _compli unknow _compli _compli unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features EUROPEAN PART NUMBER EUROPEAN PART NUMBER EUROPEAN PART NUMBER EUROPEAN PART NUMBER EUROPEAN PART NUMBER EUROPEAN PART NUMBER
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 45 V 80 V 45 V 45 V 80 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 40 40 100 40
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e1 e0 e0 e1
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 240 240 260 240 240 260
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.625 W 0.625 W 0.625 W 0.625 W 0.8 W 0.625 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30 40 30 30 40
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
Maker - ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
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