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Datasheet> All Categories > Discrete semiconductor> The transistor> 3SK177
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3SK177

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size53KB，6 Pages
ManufacturerNEC Electronics
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3SK177 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4

3SK177 Parametric

Parameter NameAttribute value
package instructionMINIMOLD PACKAGE-4
Reach Compliance Codeunknow
Other featuresLOW NOISE
ConfigurationSINGLE
Maximum drain current (ID)0.04 A
FET technologyMETAL SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.03 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)16 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1

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DATA SHEET
MES FIELD EFFECT TRANSISTOR
3SK177
RF AMP. FOR UHF TV TUNER
N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR
4 PIN MINI MOLD
FEATURES
• Suitable for use as RF amplifier in UHF TV tuner.
• Low C
rss
: 0.02 pF TYP.
• High G
PS
: 20 dB TYP.
• Low NF : 1.1 dB TYP.
PACKAGE DIMENSIONS
in millimeters
0.4
+0.1
–0.05
1.5
+0.2
–0.1
2
3
4
5˚
0.4
+0.1
–0.05
0.16
+0.1
–0.06
5˚
1. Source
2. Drain
3. Gate 2
4. Gate 1
5˚
TEST CONDITIONS
V
G1S
= –4 V, V
G2S
= 0, I
D
= 10
µ
A
V
DS
= 5 V, V
G2S
= 0, V
G1S
= 0
V
DS
= 5 V, V
G2S
= 0, I
D
= 100
µ
A
V
DS
= 5 V, V
G1S
= 0, I
D
= 100
µ
A
V
DS
= 0, V
G1S
= –4 V, V
G2S
= 0
V
DS
= 0, V
G2S
= –4 V, V
G1S
= 0
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1.0 kHz
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1 MHz
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
0 to 0.1
(1.9)
0.6
+0.1
–0.05
1
5˚
0.4
+0.1
–0.05
2.8
+0.2
–0.3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate 1 to Source Voltage
Gate2 to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DSX
V
G1S
V
G2S
I
D
P
T
T
ch
T
stg
13
–4.5
–4.5
40
200
125
–55 to +125
V
V
V
mA
mW
˚C
˚C
+0.2
1.1
–0.1
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 TO Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transter Admittance
SYMBOL
BV
DSX
I
DSS
V
G1S(off)
V
G2S(off)
I
G1SS
I
G2SS
| y
fs
|
18
25
MIN.
13
5
20
40
–3.5
–3.5
10
10
35
TYP.
MAX.
UNIT
V
mA
V
V
µ
A
µ
A
ms
Input Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
C
iss
C
rss
G
PS
NF
0.5
1.0
0.02
1.5
0.03
pF
pF
dB
16.0
20.0
1.1
2.5
dB
I
DSS
Classification
Class
Marking
I
DSS
U71
U71
5 to 15
U72
U72
10 to 25
U73
U73
20 to 35
Unit: mA
U74
U74
30 to 40
Document No. P10412EJ1V0DS00 (1st edition)
(Previous No. TN-1877)
Date Published August 1995 P
Printed in Japan
0.8
29.02
(1.8)
0.850.95
©
1995

3SK177 Related Products

3SK177 3SK177-U74 3SK177-U73 3SK177-U72 3SK177-U71
Description RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4
package instruction MINIMOLD PACKAGE-4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknow unknown unknown unknown unknown
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum drain current (ID) 0.04 A 0.04 A 0.04 A 0.04 A 0.04 A
FET technology METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.03 pF 0.03 pF 0.03 pF 0.03 pF 0.03 pF
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1 1 1
Number of terminals 4 4 4 4 4
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Minimum power gain (Gp) 16 dB 16 dB 16 dB 16 dB 16 dB
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE
Base Number Matches 1 1 1 1 1
Maker - NEC Electronics NEC Electronics NEC Electronics NEC Electronics
Contacts - 4 4 4 4
Maximum operating temperature - 125 °C 125 °C 125 °C 125 °C

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