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PN3569_D75Z

Description
trans GP npn 40v 500ma TO-92
Categorysemiconductor    Discrete semiconductor   
File Size24KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance  
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PN3569_D75Z Overview

trans GP npn 40v 500ma TO-92

PN3569_D75Z Parametric

Parameter NameAttribute value
Datasheets
PN3569
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package2,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
PackagingTape & Box (TB)
Transistor TypeNPN
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)40V
Vce Saturation (Max) @ Ib, Ic250mV @ 15mA, 150mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 1V
Power - Max625mW
Frequency - Transiti-
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
PN3569
PN3569
NPN General Purpose Amplifier
• This device is designed for use at general purpose amplifiers and
switches requiring collecor currents to 300mA.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
40
80
5.0
500
- 55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
h
fe
Parameter
Test Condition
I
C
= 30µA, I
B
= 0
I
C
= 100µA, I
E
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 40V, I
E
= 0
V
EB
= 4.0V, I
C
= 0
V
CE
= 1V, I
C
= 150mA
V
CE
= 1V, I
C
= 30mA
I
C
= 150mA, I
B
= 15mA
I
C
= 150mA, V
CE
= 1V
I
C
= 50mA, V
CE
= 10V, f = 10MHz
3.0
100
100
Min.
40
80
5.0
50
25
300
0.25
1.1
30
V
V
V
nA
nA
Max.
Units
V
Collector-Emitter Sustaining Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Small Signal current Gain
On Characteristics
Small Signal Characteristics
* Pulse Test: Pulse Width
300µs, Duty Cycle
2.0%
Thermal Characteristics
T
a
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, November 2003

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