CAT22C10C-200 datasheet, PDF - EEWORLD Datasheet

CAT22C10C-200: DescriptionNon-Volatile SRAM, 64X4, 200ns, CMOS, CDIP18; Categorystorage storage; File Size478KB，9 Pages; ManufacturerCatalyst; Websitehttp://www.catalyst-semiconductor.com/

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CAT22C10C-200 Overview

Non-Volatile SRAM, 64X4, 200ns, CMOS, CDIP18

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	101283644
package instruction	DIP, DIP18,.3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	200 ns
JESD-30 code	R-XDIP-T18
JESD-609 code	e0
Memory IC Type	NON-VOLATILE SRAM
memory width	4
Number of terminals	18
word count	64 words
character code	64
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64X4
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP18,.3
Package shape	RECTANGULAR
Package form	IN-LINE
power supply	5 V
Certification status	Not Qualified
Maximum slew rate	0.04 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

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