MMDT4146
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
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Complementary Pair
One 4124-Type NPN
One 4126-Type PNP
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
Mechanical Data
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•
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Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound,
Note 5. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
C
2
B
1
E
1
E1, B1, C1 = PNP4126 Section
E2, B2, C2 = NPN4124 Section
E
2
B
2
C
1
Top View
Device Schematic
Maximum Ratings, NPN 4124 Section
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
30
25
5.0
200
Unit
V
V
V
mA
(Note 1)
Maximum Ratings, PNP 4126 Section
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-25
-25
-4
-200
Unit
V
V
V
mA
(Note 1)
Thermal Characteristics
– Total Device
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Notes:
1.
2.
3.
4.
5.
(Note 1, 2)
(Note 1)
Symbol
P
D
R
θ
JA
Value
200
625
Unit
mW
°C/W
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Maximum combined dissipation.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMDT4146
Document number: DS30162 Rev. 11 - 2
1 of 5
www.diodes.com
January 2009
© Diodes Incorporated
MMDT4146
Electrical Characteristics, NPN 4124 Section
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
@T
A
= 25°C unless otherwise specified
Min
30
25
5.0
⎯
⎯
120
60
⎯
⎯
⎯
⎯
120
300
⎯
Max
⎯
⎯
⎯
50
50
360
⎯
0.30
0.95
4.0
8.0
480
⎯
5.0
Unit
V
V
V
nA
nA
⎯
V
V
pF
pF
⎯
MHz
dB
Test Condition
I
C
= 10μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 20V, I
E
= 0V
V
EB
= 3.0V, I
C
= 0V
I
C
= 2.0mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 50mA, I
B
= 5.0mA
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 1.0V, I
C
= 2.0mA,
f = 1.0kHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
V
CE
= 5.0V, I
C
= 100μA,
R
S
= 1.0kΩ, f = 1.0kHz
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
h
fe
f
T
NF
Electrical Characteristics, PNP 4126 Section
Characteristic
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
6. Short duration pulse test used to minimize self-heating effect.
@T
A
= 25°C unless otherwise specified
Min
-25
-25
-4.0
⎯
⎯
120
60
⎯
⎯
⎯
⎯
120
250
⎯
Max
⎯
⎯
⎯
-50
-50
360
⎯
-0.40
-0.95
4.5
10
480
⎯
4.0
Unit
V
V
V
nA
nA
⎯
V
V
pF
pF
⎯
MHz
dB
Test Condition
I
C
= -10μA, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CB
= -20V, I
E
= 0V
V
EB
= -3.0V, I
C
= 0V
I
C
= -2.0mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -50mA, I
B
= -5.0mA
I
C
= -50mA, I
B
= -5.0mA
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
V
CE
= -1.0V, I
C
= -2.0mA,
f = 1.0kHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
V
CE
= -5.0V, I
C
= -100μA,
R
S
= 1.0kΩ, f = 1.0kHz
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
h
fe
f
T
NF
MMDT4146
Document number: DS30162 Rev. 11 - 2
2 of 5
www.diodes.com
January 2009
© Diodes Incorporated
MMDT4146
1,000
350
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
0
R
θJA
= 625
°
C/W
h
FE
, DC CURRENT GAIN
100
10
1
50
75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Total Device, Note 1)
25
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.0
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain
vs. Collector Current (PNP-4126)
1,000
10
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.9
1
0.8
0.7
0.1
0.6
I
C
I
B
= 10
0.01
10
1
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current (PNP-4126)
0.5
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current (PNP-4126)
100
1,000
h
FE
, DC CURRENT GAIN
CAPACITANCE (pF)
100
10
10
1
1
100
10
V
R
, REVERSE VOLTAGE (V)
Fig. 5 Typical Capacitance Characteristics (PNP-4126)
0.1
1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical DC Current Gain
vs. Collector Current (NPN-4124)
1,000
MMDT4146
Document number: DS30162 Rev. 11 - 2
3 of 5
www.diodes.com
January 2009
© Diodes Incorporated
MMDT4146
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1
10
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
1
0.01
0.1
1
10
1,000
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current (NPN-4124)
0.1
0.1
1
10
1,000
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current (NPN-4124)
15
CAPACITANCE (pF)
10
5
0
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 9 Typical Capacitance Characteristics (NPN-4124)
Ordering Information
Part Number
MMDT4146-7-F
Notes:
(Note 7)
Case
SOT-363
Packaging
3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K12 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
K12
Date Code Key
Year
1998
Code
J
Month
Code
Jan
1
1999
K
2000
L
Feb
2
2001
M
Mar
3
2002
N
2003
P
Apr
4
2004
R
May
5
YM
2005
S
2006
T
Jun
6
2007 2008
U
V
Jul
7
2009
W
Aug
8
2010
X
Sep
9
2011
Y
2012
Z
Oct
O
2013
A
Nov
N
2014
B
2015
C
Dec
D
MMDT4146
Document number: DS30162 Rev. 11 - 2
4 of 5
www.diodes.com
January 2009
© Diodes Incorporated
MMDT4146
Package Outline Dimensions
A
B C
H
K
M
J
D
F
L
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Typ
F
0.40
0.45
H
1.80
2.20
J
0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.22
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
C2
C2
Z
G
C1
Y
X
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
MMDT4146
Document number: DS30162 Rev. 11 - 2
5 of 5
www.diodes.com
January 2009
© Diodes Incorporated
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