3SK228XR-TR datasheet, PDF - EEWORLD Datasheet

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3SK228XR-TR: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MPAK-4; CategoryDiscrete semiconductor The transistor; File Size154KB，6 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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3SK228XR-TR Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MPAK-4

3SK228XR-TR Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	12 V
Maximum drain current (ID)	0.05 A
FET technology	METAL SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.05 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	17 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

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3SK228XR-TR Related Products

	3SK228XR-TR	3SK228XR-UR	3SK228XR-TL	3SK228XR-UL
Description	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MPAK-4	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MPAK-4	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MPAK-4	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MPAK-4
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	4	4	4
Reach Compliance Code	unknow	unknow	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	SOURCE	SOURCE	SOURCE	SOURCE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	12 V	12 V	12 V	12 V
Maximum drain current (ID)	0.05 A	0.05 A	0.05 A	0.05 A
FET technology	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.05 pF	0.05 pF	0.05 pF	0.05 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1
Number of terminals	4	4	4	4
Operating mode	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	17 dB	17 dB	17 dB	17 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
Base Number Matches	1	1	1	1

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