KSC2258/2258A
KSC2258/2258A
High Voltage General Amplifier
TV Video Output Amplifier
• High BV
CEO
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSC2258
: KSC2258A
V
CEO
Collector-Emitter Voltage
: KSC2258
: KSC2258A
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
250
300
6
100
150
4
150
- 55 ~ 150
V
V
V
mA
mA
W
°C
°C
250
300
V
V
Parameter
Value
Units
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
EBO
I
CER
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
E
= 0.1mA, I
C
= 0
V
CE
= 250V, R
BE
= 100KΩ
V
CE
= 20V, I
C
= 40mA
V
CE
= 50V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CE
= -20V, I
C
= 40mA
V
CE
= 10V, I
C
= 10mA
V
CB
= 50V, f = 1MHz
100
3
4.5
40
30
1.2
1.2
V
V
MHz
pF
Min.
6
Typ.
Max.
100
Units
V
µA
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2258/2258A
Typical Characteristics
100
1000
I
B
=2.0mA
I
C
[mA], COLLECTOR CURRENT
80
h
FE
, DC CURRENT GAIN
I
B
=1.8mA
I
B
=1.6mA
I
B
=1.4mA
I
B
=1.2mA
I
B
=1.0mA
I
B
=0.8mA
I
B
=0.6mA
I
B
=0.4mA
V
CE
= 10V
100
60
40
10
I
B
=0.2mA
20
0
0
2
4
6
8
10
1
0.1
1
10
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
V
CE
(sat) [V], SATURATION VOLTAGE
I
C
= 10 I
B
f = 1 MHz
10
1
V
CE
(sat)
0.1
0.01
1
10
100
1000
C
OB
(pF), CAPACITANCE
1
1
10
100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
5
V
CB
= 10 V
100
P
D
[W], POWER DISSIPATION
4
3
2
10
1
1
1
10
100
0
0
25
50
75
o
100
125
150
175
200
225
250
I
C
[mA], COLLECTOR CURRENT
T
C
[ C], CASE TEMPERATURE
Figure 5. Current Gain Bandwidth Product
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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not intended to be an exhaustive list of all such trademarks.
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E
2
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®
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DISCLAIMER
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®
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UHC™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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INTERNATIONAL.
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1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E