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KSC2258STU

Description
transistor npn 250v 100ma TO-126
CategoryDiscrete semiconductor    The transistor   
File Size44KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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KSC2258STU Overview

transistor npn 250v 100ma TO-126

KSC2258STU Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage250 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)4 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
KSC2258/2258A
KSC2258/2258A
High Voltage General Amplifier
TV Video Output Amplifier
• High BV
CEO
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSC2258
: KSC2258A
V
CEO
Collector-Emitter Voltage
: KSC2258
: KSC2258A
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
250
300
6
100
150
4
150
- 55 ~ 150
V
V
V
mA
mA
W
°C
°C
250
300
V
V
Parameter
Value
Units
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
EBO
I
CER
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
E
= 0.1mA, I
C
= 0
V
CE
= 250V, R
BE
= 100KΩ
V
CE
= 20V, I
C
= 40mA
V
CE
= 50V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CE
= -20V, I
C
= 40mA
V
CE
= 10V, I
C
= 10mA
V
CB
= 50V, f = 1MHz
100
3
4.5
40
30
1.2
1.2
V
V
MHz
pF
Min.
6
Typ.
Max.
100
Units
V
µA
©2000 Fairchild Semiconductor International
Rev. A, February 2000

KSC2258STU Related Products

KSC2258STU
Description transistor npn 250v 100ma TO-126
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker Fairchild
Reach Compliance Code unknow
ECCN code EAR99
Maximum collector current (IC) 0.1 A
Collector-emitter maximum voltage 250 V
Configuration SINGLE
Minimum DC current gain (hFE) 40
JEDEC-95 code TO-126
JESD-30 code R-PSFM-T3
JESD-609 code e3
Number of components 1
Number of terminals 3
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type NPN
Maximum power dissipation(Abs) 4 W
Certification status Not Qualified
surface mount NO
Terminal surface Matte Tin (Sn)
Terminal form THROUGH-HOLE
Terminal location SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications AMPLIFIER
Transistor component materials SILICON
Nominal transition frequency (fT) 100 MHz

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