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BC307BRL1

Description
transistor pnp 45v 100ma TO-92
CategoryDiscrete semiconductor    The transistor   
File Size50KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC307BRL1 Overview

transistor pnp 45v 100ma TO-92

BC307BRL1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCASE 29-11, TO-226, 3 PIN
Contacts3
Manufacturer packaging codeCASE 29-11
Reach Compliance Code_compli
ECCN codeEAR99
Is SamacsysN
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)240
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)280 MHz
Base Number Matches1
BC307B, BC307C
Amplifier Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
350
2.8
P
D
1.0
8.0
T
J
, T
stg
−55 to +150
W
mW/°C
°C
1
2
mW
mW/°C
TO−92
CASE 29
STYLE 17
3
BC30
7x
AYWW
G
G
Value
−45
−50
−5.0
−100
Unit
Vdc
Vdc
Vdc
mAdc
2
BASE
3
EMITTER
MARKING
DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
357
125
Unit
°C/W
°C/W
BC307x = Device Code
x = B or C
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC307B
BC307BG
BC307BRL1
BC307BRL1G
BC307BZL1
BC307BZL1G
BC307C
BC307CG
Package
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
5000 Units / Box
5000 Units / Box
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Box
2000 / Ammo Box
5000 Units / Box
5000 Units / Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC307/D
1
September, 2005 − Rev. 3

BC307BRL1 Related Products

BC307BRL1 BC307CG
Description transistor pnp 45v 100ma TO-92 transistor pnp 45v 100ma TO-92
Is it Rohs certified? incompatible conform to
Maker ON Semiconductor ON Semiconductor
Parts packaging code TO-92 TO-92
package instruction CASE 29-11, TO-226, 3 PIN CASE 29-11, TO-226, 3 PIN
Contacts 3 3
Manufacturer packaging code CASE 29-11 CASE 29-11
Reach Compliance Code _compli unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 45 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 200 420
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 240 260
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.35 W 1 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 40
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 280 MHz 280 MHz

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