KSC5042F
KSC5042F
High Voltage Switchihg Dynamic Focus
Application
•
•
•
•
High Collector-Emitter Breakdown Voltage : BV
CEO
=900V
Small C
ob
=2.8pF (Typ.)
Wide S.O.A
High reliability
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
1500
900
5
100
300
6
150
- 55 ~ 150
Units
V
V
V
mA
mA
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 900V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
I
C
= 20mA, I
B
= 4mA
I
C
= 20mA, I
B
= 4mA
V
CB
= 100V, f = 1MHz
2.8
30
5
2
V
V
pF
Min.
1500
900
5
10
10
Typ.
Max.
Units
V
V
V
µA
µA
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
KSC5042F
Typical Characteristics
100
A
I
B
= 10m
A
I
B
= 9m
100
A
I
B
= 8m
A
I
B
= 7m
A
I
B
= 6m
V
CE
= 5V
A
I
B
= 5m
I
C
[A], COLLECTOR CURRENT
80
A
I
B
= 3m
60
A
I
B
= 2m
h
FE
, DC CURRENT GAIN
8
10
A
I
B
= 4m
10
40
A
I
B
= 1m
20
I
B
= 0mA
0
0
2
4
6
1
1
10
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
I
C
= 5 I
B
f = 1MHz
1
V
BE
(sat)
C
ob
[pF], CAPACITANCE
100
10
0.1
V
CE
(sat)
1
0.01
1
10
0.1
1
10
100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector-Base Capacitance
8
I
CP
(max)
7
s
0
µ
10
s
0
µ
20
s
0
µ
50 s
1
m
s
10
m
I
C
[mA], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
100
I
C
(max)
DC
6
5
4
T
c
3
10
2
T
a
1
1
1
10
100
1000
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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®
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2
CMOS™
E
HiSeC™
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I
2
C™
Across the board. Around the world.™
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®
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®
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®
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®
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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As used herein:
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or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
PCB Design
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