1.5A Dual High Speed
MOSFET Drivers
CORPORATION
CLM4426 / CLM4427 / CLM4428
FEATURES
DESCRIPTION
The CLM4426 series are dual CMOS drivers are designed to
drive capacitive, resistive and inductive loads switching
1000pF gate capacitances in under 30ns while providing low
impedances in both the ON and OFF states to insure the
MOSFET’s intended state will not be affected. All terminals
are fully protected up to 4kV of ESD.
ORDERING INFORMATION
Part
CLM4426CP
CLM4426EP
CLM4426CY
CLM4426EY
CLM4427CP
CLM4427EP
CLM4427CY
CLM4427EY
CLM4428CP
CLM4428EP
CLM4428CY
CLM4428EY
Logic
Inverting
Inverting
Inverting
Inverting
Noninverting
Noninverting
Noninverting
Noninverting
Differential
Differential
Differential
Differential
Package
8 Pin PDIP
8 Pin PDIP
8 Pin SOIC
8 Pin SOIC
8 Pin PDIP
8 Pin PDIP
8 Pin SOIC
8 Pin SOIC
8 Pin PDIP
8 Pin PDIP
8 Pin SOIC
8 Pin SOIC
Temperature
0
o
C to 70
o
C
-40
o
C to 85
o
C
0
o
C to 70
o
C
-40
o
C to 85
o
C
0
o
C to 70
o
C
-40
o
C to 85
o
C
0
o
C to 70
o
C
-40
o
C to 85
o
C
0
o
C to 70
o
C
-40
o
C to 85
o
C
0
o
C to 70
o
C
-40
o
C to 85
o
C
•
•
•
•
•
•
•
•
•
High Peak Output Current . . . . . . . . . . . . . . . . . . . >1.5A
Fast Switching . . . . . . . . . . . . . . . . . . . . . . . . . . t
D
= 40ns
Wide Operating Range . . . . . . . . . . . . . . . . . 4.5V to 18V
Matched Rise and Fall Times
ESD Protected . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4kV
APPLICATIONS
Motor Controls
Switch Mode Power Supplies
Pulse Transformer Driver
Class D Switching Amplifiers
FUNCTIONAL DIAGRAM
V
DD
INVERTING
OUTPUTS
2mA
300mV
OUTPUT
NONINVERTING
OUTPUTS
INPUT
4.7V
CLM4426/CLM4427/CLM4428
GND
EFFECTIVE
INPUT
C = 12pF
NOTES:
1. CA4428 has one inverting and one noninverting driver.
2. Ground any unused driver input.
1L-11
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
CLM4426 / CLM4427 / CLM4428
CORPORATION
ABSOLUTE MAXIMUM RATINGS
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +22V
Input Voltage, IN A or IN B. . . . . . . . . V
DD
+0.3V to GND-5.0V
Maximum Chip Temperature . . . . . . . . . . . . . . . . . . . . +150
o
C
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300
o
C
Package Thermal Resistance
PDIP R
θJ-A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
o
C/W
PDIP R
θJ-C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
o
C/W
SOIC R
θJ-A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250
o
C/W
SOIC R
θJ-C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
o
C/W
Operating Temperature Range
C Version . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0
o
C to +70
o
C
E Version . . . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to +85
o
C
Power Dissipation
Plastic. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000mW
SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields.
Stresses above those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other
conditions above those indicated in the operation sections of the
specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
PACKAGE POWER
DISSIPATION
1000
PDIP
SLOPE = –8mW/˚C
800
P
D
(mW)
600
400
SOIC
SLOPE = –4mW/˚C
200
0
25
50
75
100
125
150
1B-38
AMBIENT TEMPERATURE (˚C)
ELECTRICAL CHARACTERISTICS
T
A
= +25
o
C with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
SYMBOL
INPUT
V
IH
V
IL
I
IN
OUTPUT
V
OH
V
OL
R
O
I
PK
I
REV
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
V
DD
-0.025
-
-
-
>0.5
-
-
7
1.5
-
-
0.025
10
-
-
V
V
Ω
A
A
Duty Cycle
≤
2%
t
≤
300µs
V
DD
= 18V, I
O
= 10mA
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
-
-1
-
-
-
-
0.8
1
V
V
µA
0V
≤
V
IN
≤
V
DD
PARAMETER
MIN
TYP
MAX
UNIT
TEST CONDITIONS
SWITCHING TIME
(Note 1)
t
R
t
F
t
D1
t
D2
Rise Time
Fall Time
Delay Time
Delay Time
-
-
-
-
25
25
-
-
30
30
30
50
ns
ns
ns
ns
Figure 1
Figure 1
Figure 1
Figure 1
POWER SUPPLY
I
S
Power Supply Current
-
-
-
-
4.5
0.4
mA
mA
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
Note:
1. Switching times are guaranteed by design.
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
CLM4426 / CLM4427 / CLM4428
CORPORATION
PIN CONFIGURATIONS
NC
1
8
NC
NC
1
8
NC
NC
1
8
NC
IN A
GND
IN B
2
CLM4426
3
4
7
6
5
OUT A
V
DD
OUT B
IN A
GND
IN B
2
CLM4427
3
4
7
6
5
OUT A
V
DD
OUT B
IN A
GND
IN B
2
CLM4428
3
4
7
6
5
OUT A
V
DD
OUT B
2
7
2,4
7,5
2,4
7,5
4
5
INVERTING
NC = NO INTERNAL CONNECTION
NONINVERTING
DIFFERENTIAL
NOTE: SOIC pinout is identical to DIP.
!L-12
ELECTRICAL CHARACTERISTICS
Specifications measured over temperature range with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
SYMBOL
INPUT
V
IH
V
IL
I
IN
OUTPUT
V
OH
V
OL
R
O
I
PK
I
REV
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
V
DD
-0.025
-
-
-
>0.5
-
-
9
1.5
-
-
0.025
12
-
-
V
V
Ω
A
A
Duty Cycle
≤
2%
t
≤
300µs
V
DD
= 18V, I
O
= 10mA
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
-
-1
-
-
-
-
0.8
1
V
V
µA
0V
≤
V
IN
≤
V
DD
PARAMETER
MIN
TYP
MAX
UNIT
TEST CONDITIONS
SWITCHING TIME
(Note 1)
t
R
t
F
t
D1
t
D2
Rise Time
Fall Time
Delay Time
Delay Time
-
-
-
-
-
-
-
-
40
40
40
60
ns
ns
ns
ns
Figure 1
Figure 1
Figure 1
Figure 1
POWER SUPPLY
I
S
Power Supply Current
-
-
-
-
8
0.6
mA
mA
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
Note:
1. Switching times are guaranteed by design.
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
CLM4426 / CLM4427 / CLM4428
CORPORATION
FIGURE 1. SWITCHING TIME TEST CIRCUIT
+5V
90%
INPUT
≈0.4V
V
D D
= 18V
V
DD
4.7µF
6
INPUT
2,4
5,7
0V
OUTPUT
INVERTING DRIVER
C
L
= 1000pF
0.1µF
OUTPUT
10%
10%
10%
t
D1
90%
t
F
t
D2
t
R
90%
+5V
INPUT
3
≈0.4V
V
DD
OUTPUT
0V
t
D1
10%
10%
90%
90%
t
R
t
D2
90%
t
F
10%
NONINVERTING DRIVER
1B-40
10
–8
9
8
7
6
5
CROSSOVER ENERGY LOSS
A
•
sec
4
3
2
10
–9
4
6
8
10
V
DD
12
14
16
18
NOTE:
The values on this graph represent the loss seen by both
drivers in a package during one complete cycle. For a single
driver, divide the stated values by 2. For a single transition of a
single driver, divide the stated value by 4.
1B-41
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
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