CLX34
HiRel
X-Band GaAs Power-MESFET
•
•
•
•
•
•
•
HiRel
Discrete and Microwave Semiconductor
For professional power amplifiers
For frequencies from 500 MHz to 10 GHz
Hermetically sealed microwave power package
Low thermal resistance for
high voltage application
Power added efficiency > 53 %
Component Under Development,
Package Modifications Foreseen
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Type
Marking
Ordering Code
Pin Configuration
1
2
S
3
D
Package
CLX34-00 (ql)
CLX34-05 (ql)
CLX34-10 (ql)
-
see below
G
MWP-25
tbc.
CLX34-nn: specifies output power level (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
on request
on request
on request
on request
(see order instructions for ordering example)
Semiconductor Group
1 of 10
Draft D, September 99
CLX34
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Gate forward current
Compression Level
1)
Operation Range 1
Symbol
V
DS
V
DG
V
GS
I
D
I
G
P
C
Values
11
13
-6
2000
10
1.5 at V
DS
≤
8 V
2.5 at V
DS
≤
7 V
3.5 at V
DS
≤
6 V
Unit
V
V
V
mA
mA
dB
Compression Level
2)
Operation Range 2
Compression Level
3)
Operation Range 3
Junction temperature
Storage temperature range
Total power dissipation
4)
P
C
P
C
T
J
T
stg
P
tot
T
sol
3.5 at V
DS
≤
6 V
tbd.
175
- 65...+ 175
5.4
230
dB
dB
°C
°C
W
°C
Soldering temperature
5)
Thermal Resistance
Junction-soldering point
Notes.:
R
th JS
≤
20
K/W
1) Operation Range 1: 400 mA
≤
I
D
≤
800 mA
2) Operation Range 2: I
D
> 800 mA
3) Operation Range 3: I
D
< 400 mA
4) At T
S
= + 40 °C. For T
S
> + 40 °C derating is required.
5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
Semiconductor Group
2 of 10
Draft D, September 99
CLX34
Electrical Characteristics
(at T
A
=25°C; unless otherwise specified)
Parameter
Symbol
min.
Values
typ.
max.
Unit
DC Characteristics
Drain-source saturation current
V
DS
= 2 V, V
GS
= 0 V
Gate threshold voltage
V
DS
= 3 V, I
D
= 60 mA
Drain current at pinch-off, low V
DS
V
DS
= 3 V, V
GS
= -3.5 V
Gate current at pinch-off, low V
DS
V
DS
= 3 V, V
GS
= -3.5 V
Drain current at pinch-off, high V
DS
V
DS
= 9.5 V, V
GS
= -3.5 V
Gate current at pinch-off, high V
DS
V
DS
= 9.5 V, V
GS
= -3.5 V
Transconductance
V
DS
= 3 V, I
D
= 600 mA
Thermal resistance
Junction to soldering point
V
DS
= 8 V, I
D
= 600 mA, T
s
= +25°C
R
th JS
-
16
-
K/W
g
m
660
780
-
mS
-I
Gp9.5
-
-
1200
µA
I
Dp9.5
-
-
3000
µA
-I
Gp3
-
-
120
µA
I
Dp3
-
-
400
µA
-V
Gth
1.2
2.2
3.2
V
I
Dss
900
1500
2000
mA
Semiconductor Group
3 of 10
Draft D, September 99
CLX34
Electrical Characteristics
(continued)
Parameter
Symbol
min.
Values
typ.
max.
Unit
AC Characteristics
Linear power gain
1)
V
DS
= 8 V, I
D
= 600 mA, f = 2.3 GHz,
P
in
= 11 dBm
CLX34-00
CLX34-05
CLX34-10
Power output at 1dB gain compr.
1)
V
DS
= 8 V, I
D(RF off)
= 600 mA, f = 2.3 GHz
CLX34-00
CLX34-05
CLX34-10
Output Power
1)
V
DS
= 8 V, I
D(RF off)
= 600 mA, f = 2.3 GHz,
P
in
= 21.0 dBm
CLX34-00
CLX34-05
CLX34-10
Power added efficiency
1), 2)
G
lp
dB
13.5
14.0
14.0
P
1dB
14.5
15.0
15.0
-
-
-
dBm
-
-
-
P
out
33.2
34.0
34.5
-
-
-
dBm
32.7
33.7
34.2
PAE
33.2
34.0
34.5
-
-
-
%
V
DS
= 8 V, I
D(RF off)
= 600 mA, f = 2.3 GHz,
P
in
= 21.0 dBm
CLX34-00
CLX34-05
CLX34-10
Notes.:
1) RF Power characteristics given for power matching conditions
2) Power added efficiency: PAE = (P
RFout
- P
RFin
) / P
DC
42
44
46
47
51
53
-
-
-
Semiconductor Group
4 of 10
Draft D, September 99
CLX34
Typical Common Source S-Parameters
V
DS
= 3 V, I
D
= 600 mA, Z
o
= 50
Ω
f
[GHz]
0,6
0,8
1,0
1,2
1,4
1,6
1,8
2,0
2,2
2,4
2,6
2,8
3,0
3,2
3,4
3,6
3,8
4,0
4,2
4,4
4,6
4,8
5,0
5,5
6,0
6,5
7,0
7,5
8,0
8,5
9,0
9,5
10,0
10,5
11,0
11,5
12,0
12,5
13,0
13,5
14,0
14,5
15,0
15,5
16,0
16,5
17,0
17,5
18,0
|S11|
[magn]
0,900
0,906
0,911
0,914
0,916
0,918
0,919
0,919
0,919
0,919
0,919
0,919
0,918
0,918
0,917
0,916
0,916
0,916
0,916
0,916
0,916
0,916
0,916
0,915
0,914
0,913
0,912
0,911
0,909
0,908
0,907
0,906
0,905
0,905
0,905
0,904
0,900
0,893
0,883
0,871
0,856
0,839
0,817
0,789
0,758
0,724
0,699
0,682
0,668
<S11
[angle]
-133
-151
-163
-171
-177
178
174
170
166
163
161
158
156
153
151
149
147
145
143
140
138
136
135
130
125
120
116
111
106
100
94
89
83
78
73
69
64
59
54
49
44
38
32
25
18
11
4
-2
-8
|S21|
[magn]
4,453
3,402
2,688
2,208
1,872
1,624
1,433
1,283
1,162
1,063
0,981
0,912
0,852
0,816
0,785
0,752
0,718
0,687
0,664
0,642
0,616
0,595
0,576
0,540
0,504
0,478
0,454
0,435
0,418
0,404
0,390
0,378
0,367
0,356
0,348
0,342
0,339
0,339
0,342
0,348
0,358
0,372
0,387
0,402
0,421
0,440
0,461
0,482
0,505
<S21
[angle]
115
100
91
84
79
75
71
67
63
60
57
54
51
48
45
42
40
38
35
33
30
28
26
20
14
8
2
-4
-10
-16
-22
-28
-34
-39
-44
-49
-54
-59
-64
-69
-74
-79
-85
-92
-99
-106
-113
-118
-123
|S12|
[magn]
0,0200
0,0224
0,0247
0,0260
0,0276
0,0293
0,0306
0,0320
0,0336
0,0351
0,0368
0,0388
0,0403
0,0420
0,0436
0,0453
0,0464
0,0480
0,0493
0,0510
0,0524
0,0544
0,0560
0,0599
0,0651
0,0702
0,0753
0,0807
0,0856
0,0913
0,0962
0,1016
0,1070
0,1118
0,1171
0,1224
0,1291
0,1358
0,1450
0,1561
0,1693
0,1850
0,2026
0,2209
0,2420
0,2636
0,2844
0,3044
0,3253
<S12
[angle]
32
30
29
28
27
27
26
26
26
25
25
25
25
25
24
23
22
21
21
20
18
18
16
13
11
8
5
1
-3
-7
-11
-16
-20
-25
-29
-33
-36
-40
-44
-49
-54
-59
-65
-72
-79
-87
-94
-99
-103
|S22|
[magn]
0,836
0,840
0,844
0,847
0,851
0,853
0,853
0,853
0,853
0,853
0,853
0,853
0,853
0,853
0,853
0,853
0,853
0,854
0,853
0,854
0,853
0,854
0,854
0,854
0,854
0,855
0,855
0,856
0,856
0,856
0,856
0,857
0,858
0,860
0,860
0,861
0,860
0,858
0,854
0,846
0,837
0,824
0,811
0,796
0,777
0,757
0,739
0,724
0,714
<S22
[angle]
175
172
169
167
164
162
159
157
155
153
151
149
147
145
144
142
140
139
137
136
133
132
130
126
122
118
114
110
105
100
95
90
85
81
77
73
69
65
61
57
54
50
46
42
38
34
30
26
23
k-Fact.
[magn]
0,55
0,63
0,70
0,77
0,83
0,88
0,94
0,99
1,04
1,08
1,11
1,14
1,17
1,19
1,19
1,20
1,23
1,24
1,25
1,25
1,27
1,26
1,27
1,27
1,27
1,26
1,25
1,24
1,23
1,22
1,22
1,21
1,20
1,19
1,17
1,15
1,15
1,16
1,17
1,19
1,20
1,20
1,21
1,22
1,22
1,22
1,20
1,18
1,14
S
21
/S
12
[dB]
23,5
21,8
20,4
19,3
18,3
17,4
16,7
16,0
15,4
14,8
14,3
13,7
13,3
12,9
12,6
12,2
11,9
11,6
11,3
11,0
10,7
10,4
10,1
9,5
8,9
8,3
7,8
7,3
6,9
6,5
6,1
5,7
5,3
5,0
4,7
4,5
4,2
4,0
3,7
3,5
3,2
3,0
2,8
2,6
2,4
2,2
2,1
2,0
1,9
MAG
[dB]
14,2
13,1
12,2
11,4
10,7
10,3
9,9
9,5
9,0
8,6
8,3
8,0
7,6
7,3
7,0
6,4
5,8
5,3
4,8
4,4
4,0
3,6
3,2
2,9
2,6
2,4
2,2
2,1
1,8
1,5
1,2
0,9
0,6
0,3
0,0
-0,2
-0,4
-0,6
-0,6
-0,6
-0,4
Semiconductor Group
5 of 10
Draft D, September 99
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