MITSUBISHI IGBT MODULES
CM15TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
A
B
L
GuP SuP
P
K
GvP SvP
K
GwP SwP
M
T - DIA.
(2 TYP.)
D
H
N
U
V
W
J
E
GuN SuN
GvN SvN
GwN SwN
Q
S
C
TAB #110, t = 0.5
S
Q
S
P
TAB #250, t = 0.8
G
N
F
R
P
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
IGBTs in a three phase bridge con-
figuration, with each transistor hav-
ing a reverse-connected super-fast
recovery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system as-
sembly and thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM15TF-12H
is a 600V (V
CES
), 15 Ampere
Six-IGBT Module.
Type
CM
Current Rating
Amperes
15
V
CES
Volts (x 50)
12
GuP
(EuP)
U
GvP
(EvP)
V
GwP
(EwP)
W
GuN
(EuN)
N
GvN
(EvN)
GwN
(EwN)
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
3.54
2.99±0.01
2.52
1.54
0.98
0.90
0.87
0.75
0.71
Millimeters
90.0
76.0±0.2
64.0
39.0
25.0
23.0
22.0
19.0
18.0
Dimensions
K
L
M
N
P
Q
R
S
T
Inches
0.67
0.63
0.59
0.56
0.51
0.43
0.26
0.24
0.22 Dia.
Millimeters
17.0
16.0
15.0
14.1
13.0
11.0
6.5
6.0
Dia. 5.5
Sep.1998
MITSUBISHI IGBT MODULES
CM15TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
C
= 25°C)
Peak Collector Current
Emitter Current** (T
C
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
C
= 25°C, Tj
≤
150°C)
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
V
iso
CM15TF-12H
–40 to +150
–40 to +125
600
±20
15
30*
15
30*
100
1.47 ~ 1.96
150
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
Grams
Vrms
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 1.5mA, V
CE
= 10V
I
C
= 15A, V
GE
= 15V
I
C
= 15A, V
GE
= 15V, T
j
= 150°C
Total Gate Charge
Emitter-Collector Voltage
V
CC
= 300V, I
C
= 15A, V
GE
= 15V
I
E
= 15A, V
GE
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6.0
2.1
2.15
45
–
Max.
1.0
0.5
7.5
2.8**
–
–
2.8
Units
mA
µA
Volts
Volts
Volts
nC
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
E
= 15A, di
E
/dt = –30A/µs
I
E
= 15A, di
E
/dt = –30A/µs
V
CC
= 300V, I
C
= 15A,
V
GE1
= V
GE2
= 15V, R
G
= 42Ω
V
GE
= 0V, V
CE
= 10V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.04
Max.
1.5
0.5
0.3
120
300
200
300
110
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
1.30
3.50
0.092
Units
°C/W
°C/W
°C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM15TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
30
COLLECTOR CURRENT, I
C
, (AMPERES)
30
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
T
j
= 25
o
C
COLLECTOR CURRENT, I
C
, (AMPERES)
V
GE
= 20V
15
12
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
5
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
4
20
20
11
3
10
10
9
7
8
10
2
1
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
0
0
10
20
30
COLLECTOR-CURRENT, I
C
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
EMITTER CURRENT, I
E
, (AMPERES)
10
2
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
10
1
T
j
= 25°C
8
C
ies
I
C
= 30A
10
0
C
oes
6
I
C
= 15A
10
1
4
10
-1
C
res
2
I
C
= 6A
V
GE
= 0V
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
0
0
0.8
1.6
2.4
3.2
4.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-2
10
-1
10
0
10
1
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
10
3
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
1
20
I
C
= 15A
SWITCHING TIME, (ns)
t
f
16
V
CC
= 200V
12
10
2
t
d(off)
t
d(on)
10
2
I
rr
t
rr
10
0
V
CC
= 300V
8
t
r
V
CC
= 300V
V
GE
= ±15V
R
G
= 42Ω
T
j
= 125°C
di/dt = -30A/µsec
T
j
= 25°C
4
10
1
10
0
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
10
1
10
0
10
-1
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
2
0
0
10
20
30
40
50
60
GATE CHARGE, Q
G
, (nC)
Sep.1998
MITSUBISHI IGBT MODULES
CM15TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
-2
10
-1
10
0
10
1
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 1.3°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 3.5°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
Sep.1998
Embedded System
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