MITSUBISHI IGBT MODULES
CM200DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
H
E
E
H
S
C2E1
E2
C1
E2 G2
C
K
G1 E1
G
S
L
R - M5 THD (3 TYP.)
P - DIA. (2 TYP.)
J
J
J
TAB#110 t=0.5
N
N
M
D
F
Q
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system as-
sembly and thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM200DY-12H
is a 600V (V
CES
), 200 Ampere
Dual IGBT Module.
Type
CM
Current Rating
Amperes
200
V
CES
Volts (x 50)
12
G2
E2
C2E1
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
3.70
3.150±0.01
1.89
1.18 Max.
0.90
0.83
0.71
0.67
0.63
Millimeters
94.0
80.0±0.25
48.0
30.0 Max.
23.0
21.2
18.0
17.0
16.0
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.51
0.47
0.30
0.28
0.256 Dia.
0.31
M5 Metric
0.16
Millimeters
13.0
12.0
7.5
7.0
Dia. 6.5
8.0
M5
4.0
Sep.1998
MITSUBISHI IGBT MODULES
CM200DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
C
= 25°C)
Peak Collector Current
Emitter Current** (T
C
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
C
= 25°C, T
j
≤
150°C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM200DY-12H
–40 to 150
–40 to 125
600
±20
200
400*
200
400*
780
1.47 ~ 1.96
1.96 ~ 2.94
270
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 20mA, V
CE
= 10V
I
C
= 200A, V
GE
= 15V
I
C
= 200A, V
GE
= 15V, T
j
= 150°C
Total Gate Charge
Emitter-Collector Voltage
V
CC
= 300V, I
C
= 200A, V
GE
= 15V
I
E
= 200A, V
GE
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6.0
2.1
2.15
600
–
Max.
1.0
0.5
7.5
2.8**
–
–
2.8
Units
mA
µA
Volts
Volts
Volts
nC
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
E
= 200A, di
E
/dt = –400A/µs
I
E
= 200A, di
E
/dt = –400A/µs
V
CC
= 300V, I
C
= 200A,
V
GE1
= V
GE2
= 15V, R
G
= 3.1Ω
V
GE
= 0V, V
CE
= 10V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.54
Max.
20
7
4
200
550
300
300
110
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
0.16
0.35
0.065
Units
°C/W
°C/W
°C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM200DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
400
T
j
= 25
o
C
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
400
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
V
GE
= 20V
15
12
300
11
300
4
3
200
10
200
2
100
7
9
8
100
1
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
0
0
100
200
300
400
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
10
3
T
j
= 25°C
T
j
= 25°C
EMITTER CURRENT, I
E
, (AMPERES)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
10
2
8
I
C
= 400A
C
ies
10
1
C
oes
6
I
C
= 200A
10
2
4
10
0
2
I
C
= 80A
V
GE
= 0V
C
res
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
0
0.8
1.6
2.4
3.2
4.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-1
10
-1
10
0
10
1
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
t
d(off)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
7
T
j
= 25°C
5
3
2
–di/dt = 400A/µs
10
2
7
5
3
20
I
C
= 200A
SWITCHING TIME, (ns)
t
f
t
d(on)
16
V
CC
= 200V
l
rr
t
rr
2
12
10
2
10
2
7
5
3
2
10
1
7
5
3
2
V
CC
= 300V
8
t
r
V
CC
= 300V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 125°C
4
10
1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1 1
10
2
3
5 7
10
2
2
3
5 7
10
3
10
0
0
0
200
400
600
800
1000
GATE CHARGE, Q
G
, (nC)
EMITTER CURRENT, I
E
, (AMPERES)
Sep.1998
MITSUBISHI IGBT MODULES
CM200DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
-2
10
-1
10
0
10
1
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.16°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.35°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
Sep.1998
Embedded System
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