CM20TF-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Six-IGBT IGBTMOD™
H-Series Module
20 Amperes/600 Volts
A
B
L
GuP SuP
P
K
GvP SvP
K
GwP SwP
M
T - DIA.
(2 TYP.)
D
H
N
U
V
W
J
E
GuN SuN
GvN SvN
GwN SwN
Q
S
C
.110 TAB
S
Q
S
P
.250 TAB
G
N
F
R
P
Description:
Powerex IGBTMOD™ Modules are
designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
□
High Frequency Operation
(20-25kHz)
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
Motion/Servo Control
□
UPS
□
Welding Power Supplies
□
Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM20TF-12H
is a 600V (V
CES
), 20 Ampere Six-
IGBT IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
20
V
CES
Volts (x 50)
12
GuP
SuP
U
GvP
SvP
V
GwP
SwP
W
GuN
SuN
N
GvN
SvN
GwN
SwN
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
3.54
2.99±0.01
2.52
1.54
0.98
0.90
0.87
0.75
0.71
Millimeters
90.0
76.0±0.2
64.0
39.0
25.0
23.0
22.0
19.0
18.0
Dimensions
K
L
M
N
P
Q
R
S
T
Inches
0.67
0.63
0.59
0.56
0.51
0.43
0.26
0.24
0.22 Dia.
Millimeters
17.0
16.0
15.0
14.1
13.0
11.0
6.5
6.0
Dia. 5.5
299
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM20TF-12H
Six-IGBT IGBTMOD™ H-Series Module
20 Amperes/600 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M5 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
F
I
FM
P
d
–
–
V
RMS
CM20TF-12H
–40 to +150
–40 to +125
600
±20
20
40*
20
40*
125
17
150
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
Grams
Volts
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
FM
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 2mA, V
CE
= 10V
I
C
= 20A, V
GE
= 15V
I
C
= 20A, V
GE
= 15V, T
j
= 150°C
Total Gate Charge
Diode Forward Voltage
V
CC
= 300V, I
C
= 20A, V
GS
= 15V
I
E
= 20A, V
GS
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6.0
2.1
2.15
60
–
Max.
1.0
0.5
7.5
2.8**
–
–
2.8
Units
mA
µ
A
Volts
Volts
Volts
nC
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
E
= 20A, di
E
/dt = –40A/
µ
s
I
E
= 20A, di
E
/dt = –40A/
µ
s
V
CC
= 300V, I
C
= 20A,
V
GE1
= V
GE2
= 15V, R
G
= 31Ω
V
GE
= 0V, V
CE
= 10V, f = 1MHz
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.05
Max.
2.0
0.7
0.4
120
300
200
300
110
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
µ
C
Thermal and Mechanical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
1.00
3.50
0.092
Units
°C/W
°C/W
°C/W
300
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM20TF-12H
Six-IGBT IGBTMOD™ H-Series Module
20 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
40
COLLECTOR CURRENT, I
C
, (AMPERES)
T
j
= 25
o
C
40
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
V
GE
= 20V
15
12
30
11
30
4
3
20
10
20
2
10
7
9
8
10
1
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
0
0
10
20
30
40
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
10
3
T
j
= 25°C
T
j
= 25°C
EMITTER CURRENT, I
E
, (AMPERES)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
10
1
8
I
C
= 40A
C
ies
10
0
C
oes
6
I
C
= 20A
10
2
4
10
-1
C
res
2
I
C
= 8A
V
GE
= 0V
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
0
0.8
1.6
2.4
3.2
4.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-2
10
-1
10
0
10
1
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
t
f
10
1
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
16
SWITCHING TIME, (ns)
V
CC
= 200V
t
d(off)
I
rr
12
10
2
t
d(on)
V
CC
= 300V
V
GE
= ±15V
R
G
= 31Ω
T
j
= 125°C
10
2
t
rr
10
0
V
CC
= 300V
8
t
r
di/dt = -400A/µsec
T
j
= 25°C
4
10
1
10
0
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
10
1
10
0
10
-1
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
2
0
0
20
40
60
80
100
GATE CHARGE, Q
G
, (nC)
301
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM20TF-12H
Six-IGBT IGBTMOD™ H-Series Module
20 Amperes/600 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
-2
10
-1
10
0
10
1
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 1.0°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 3.5°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
302
京公网安备 11010802033920号
EEWORLD
