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D121C

Description
0.1A, 11 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size53KB,3 Pages
ManufacturerTT Electronics
Environmental Compliance  
Download Datasheet Parametric View All

D121C Overview

0.1A, 11 ELEMENT, SILICON, SIGNAL DIODE

D121C Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid1449009383
package instructionR-PSIP-T12
Reach Compliance Codecompliant
ConfigurationCOMMON CATHODE, 11 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
JESD-30 codeR-PSIP-T12
JESD-609 codee4
Humidity sensitivity levelNOT SPECIFIED
Maximum non-repetitive peak forward current0.3 A
Number of components11
Number of terminals12
Maximum operating temperature125 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum reverse current1 µA
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal surfaceSILVER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
MODEL D SERIES
Single-In-Line
Conformal Coated
Diode Networks
RoHS Compliant Available
FEATURES
• 4 to 14 Leads
• Multiple circuit configurations
• Space saving design
ELECTRICAL
4
80V
1.0µA (V
R
= 70V)
100mA Average, 300mA Surge (1µs Max.)
1.5V @ I
F
= 100mA
200mW @ 25°C
4ns (V
R
= 6V, I
F
= 5mA, R
L
= 50Ω)
5.5pF (V
R
= 6V, f = 1MHz)
125°C
-55°C to +125°C
Reverse Voltage, V
R
Reverse Current, I
R
Forward Current, I
F
Forward Voltage, V
F
Package Power, P
PKG
Reverse Recovery Time, t
rr
Capacitance, C
Junction Temperature, T
J
, Maximum
Storage Temperature Range
Specifications subject to change without notice.
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