MITSUBISHI IGBT MODULES
CM400DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
F
F
G
P
C2E1
E2
C1
G2
E2
C
D
G1
E1
J
P
K
N - DIA.
(4 TYP.)
M
M
Q - M6 THD
(3 TYP.)
R
TAB#110 t=0.5
L
E
H
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system as-
sembly and thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM400DY-12H
is a 600V (V
CES
), 400 Ampere
Dual IGBT Module.
Type
CM
Current Rating
Amperes
400
V
CES
Volts (x 50)
12
M
G2
E2
C2E1
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
Inches
4.25
3.66±0.01
2.44
1.89±0.01
1.22 Max.
0.98
0.85
0.60
Millimeters
108.0
93.0±0.25
62.0
48.0±0.25
31.0 Max.
25.0
21.5
15.2
Dimensions
J
K
L
M
N
P
Q
R
Inches
0.59
0.55
0.30
0.28
0.256 Dia.
0.24
M6 Metric
0.20
Millimeters
15.0
14.0
8.5
7.0
Dia. 6.5
6.0
M6
5.0
Sep.1998
MITSUBISHI IGBT MODULES
CM400DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
C
= 25°C)
Peak Collector Current
Emitter Current** (T
C
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
C
= 25°C, T
j
≤
150°C)
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM400DY-12H
–40 to 150
–40 to 125
600
±20
400
800*
400
800*
1500
1.96 ~ 2.94
1.96 ~ 2.94
400
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 40mA, V
CE
= 10V
I
C
= 400A, V
GE
= 15V
I
C
= 400A, V
GE
= 15V, T
j
= 150°C
Total Gate Charge
Emitter-Collector Voltage
V
CC
= 300V, I
C
= 400A, V
GE
= 15V
I
E
= 400A, V
GE
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6.0
2.1
2.15
1200
–
Max.
1.0
0.5
7.5
2.8**
–
–
2.8
Units
mA
µA
Volts
Volts
Volts
nC
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
E
= 400A, di
E
/dt = –800A/µs
I
E
= 400A, di
E
/dt = –800A/µs
V
CC
= 300V, I
C
= 400A,
V
GE1
= V
GE2
= 15V, R
G
= 1.6Ω
V
GE
= 0V, V
CE
= 10V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
1.08
Max.
40
14
8
350
600
350
300
110
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
0.085
0.18
0.045
Units
°C/W
°C/W
°C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM400DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
800
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
800
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
T
j
= 25 C
o
V
GE
= 20V
15
12
600
11
600
4
3
400
10
400
2
200
7
200
9
8
1
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
0
0
200
400
600
800
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
10
3
T
j
= 25°C
T
j
= 25°C
I
C
= 800A
EMITTER CURRENT, I
E
, (AMPERES)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
10
2
C
ies
8
10
1
C
oes
6
I
C
= 400A
10
2
4
C
res
10
0
2
I
C
= 160A
V
GE
= 0V
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
0
0.8
1.6
2.4
3.2
4.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-1
10
-1
10
0
10
1
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
t
d(off)
t
f
10
2
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 400A
16
SWITCHING TIME, (ns)
I
rr
V
CC
= 200V
t
d(on)
12
10
2
10
2
t
rr
10
1
V
CC
= 300V
8
t
r
V
CC
= 300V
V
GE
= ±15V
R
G
= 1.6Ω
T
j
= 125°C
di/dt = -800A/µsec
T
j
= 25°C
4
10
1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
1
10
0
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
0
0
400
800
1200
1600
2000
GATE CHARGE, Q
G
, (nC)
Sep.1998
MITSUBISHI IGBT MODULES
CM400DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
-3
10
-2
10
-1
10
0
10
1
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-3
10
-2
10
-1
10
0
10
1
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.085°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.18°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
Sep.1998
stm32/stm8
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