MITSUBISHI IGBT MODULES
CM400HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
R - M4 THD
(2 TYP.)
N
Q - DIA.
(4 TYP.)
E
J
H
A
B
H
G
E
C
P - M8 THD
(2 TYP.)
G
M
F
L
D
K
M
E
C
Description:
Mitsubishi IGBT Modules are
designed for use in switching appli-
cations. Each module consists of
one IGBT in a single configuration
with a reverse-connected super-fast
recovery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system as-
sembly and thermal management.
Features:eatures:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Auxilliary Inverter for Traction
UPS
Welding Power Supplies
E
E
G
C
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
Inches
4.49
3.66±0.01
Millimeters
114.0
93.0±0.25
Dimensions
J
K
L
M
N
P
Q
R
Inches
0.71
0.57
0.43
0.41
0.35
M8 Metric
0.26 Dia.
M4 Metric
Millimeters
18.0
14.5
11.0
10.5
9.0
M8
Dia. 6.5
M4
1.50+0.04/-0.02 38.0+1.0/-0.5
1.26
32.0
1.18+0.04/-0.02 30.0+1.0/-0.5
1.02
1.0
0.83
26.0
25.5
21.0
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM400HA-34H
is a 1700V (V
CES
), 400 Ampere
Single IGBT Module.
Type
CM
Current Rating
Amperes
400
V
CES
Volts (x 50)
34
Sep.1998
MITSUBISHI IGBT MODULES
CM400HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current (T
j
≤
150°C)
Emitter Current** (T
c
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
c
= 25°C)
Mounting Torque, M8 Main Terminal
Mounting Torque, M6 Mounting
Mounting Torque, M4 Terminal
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
–
V
iso
CM600HU-12H
-40 to 150
-40 to 125
1700
±20
400
800*
400
800*
4100
8.83~10.8
1.96~2.94
0.98~1.47
980
4000
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
N·m
Grams
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 40mA, V
CE
= 10V
I
C
= 400A, V
GE
= 15V
I
C
= 400A, V
GE
= 15V, T
j
= 150°C
Total Gate Charge
Emitter-Collector Voltage
V
CC
= 750V, I
C
= 400A, V
GE
= 15V
I
E
= 400A, V
GE
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6.0
2.7
–
2900
–
Max.
4
0.5
7.5
3.7**
–*
–
3.4
Units
mA
µA
Volts
Volts
Volts
nC
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
E
= 400A, di
E
/dt = –800A/µs
I
E
= 400A, di
E
/dt = –800A/µs
V
CC
= 750V, I
C
= 400A,
V
GE1
= V
GE2
= 15V, R
G
= 10Ω
V
GE
= 0V, V
CE
= 10V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
7.0
Max.
85
20
15
900
1500
1500
800
400
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
0.030
0.060
0.023
Units
°C/W
°C/W
°C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM400HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
800
T
j
= 25°C
V
GE
= 20V
I
C
, (AMPERES)
15 12
800
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
5
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
640
640
11
I
C
, (AMPERES)
4
V
CE(sat)
, (VOLTS)
10
480
480
3
320
9
8
0
0
2
4
6
8
10
V
CE
, (VOLTS)
320
2
160
160
1
0
0
4
8
12
16
20
V
GE
, (VOLTS)
0
0
160
320
480
640
800
I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
10
3
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
10
3
8
V
CE(sat)
, (VOLTS)
I
C
= 800A
I
E
, (AMPERES)
10
2
C
ies
6
I
C
= 400A
10
2
4
10
1
V
GE
= 0V
C
oes
C
res
2
I
C
= 160A
0
0
4
8
12
16
20
V
GE
, (VOLTS)
10
1
0
1
2
V
EC
, (VOLTS)
3
4
10
0
10
-1
10
0
V
CE
, (VOLTS)
10
1
10
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
4
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
V
CC
= 750V
V
GE
= ±15V
R
G
= 10Ω
T
j
= 125°C
t
d(off)
10
3
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 400A
16
V
CC
= 500V
V
CC
= 750V
SWITCHING TIME, (ns)
t
rr
12
10
3
t
f
t
d(on)
10
2
I
rr
10
2
8
t
r
di/dt = -800A/µsec
T
j
= 25°C
4
10
2
10
1
10
2
COLLECTOR CURRENT I
C
, (AMPERES)
10
3
10
1
10
1
10
1
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE, Q
G
, (µC)
Sep.1998
Linux and Android
京公网安备 11010802033920号
EEWORLD
