PD - 94536
IRLR3802
IRLU3802
Applications
l
High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters
l
Power Management for Netcom,
Computing and Portable Applications.
HEXFET
®
Power MOSFET
V
DSS
12V
R
DS(on)
max
8.5mΩ
Q
g
27nC
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
l
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR3802
I-Pak
IRLU3802
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
12
± 12
84
60
320
88
44
0.59
-55 to + 175
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.7
40
110
Units
°C/W
Notes
through
are on page 9
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1
8/22/02
IRLR/U3802
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
∆ΒV
DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
∆
V
GS(th)
/∆T
J
I
DSS
I
GSS
g
fs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
12
–––
–––
–––
0.6
–––
–––
–––
–––
–––
31
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.009
6.5
–––
–––
-3.2
–––
–––
–––
–––
–––
27
3.6
2.0
10
11
12
28
11
14
21
17
2490
2150
530
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
8.5
V
GS
= 4.5V, I
D
= 15A
mΩ
30
V
GS
= 2.8V, I
D
= 12A
1.9
V
V
DS
= V
GS
, I
D
= 250µA
––– mV/°C
100
V
DS
= 9.6V, V
GS
= 0V
µA
250
V
DS
= 9.6V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 12V
nA
-200
V
GS
= -12V
–––
S
V
DS
= 6.0V, I
D
= 12A
41
–––
V
DS
= 6.0V
–––
V
GS
= 5.0V
–––
nC I
D
= 6.0A
–––
See Fig.16
–––
–––
nC V
DS
= 10V, V
GS
= 0V
–––
V
DD
= 6.0V, V
GS
= 4.5V
–––
ns
I
D
= 12A
–––
Clamped Inductive Load
–––
–––
V
GS
= 0V
–––
pF
V
DS
= 6.0V
–––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
300
20
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.81
0.65
52
54
50
50
84
A
320
1.2
–––
78
81
75
75
V
ns
nC
ns
nC
V
SD
t
rr
Q
rr
t
rr
Q
rr
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
T
J
= 125°C, I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 12A, V
R
=20V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 12A, V
R
=20V
di/dt = 100A/µs
2
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IRLR/U3802
1000
VGS
10V
4.5V
3.5V
2.5V
2.3V
2.0V
1.8V
BOTTOM 1.5V
TOP
1000
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
VGS
10V
4.5V
3.5V
2.5V
2.3V
2.0V
1.8V
BOTTOM 1.5V
TOP
10
10
1
1.5V
1
1.5V
0.1
0.01
0.1
1
20µs PULSE WIDTH
Tj = 25°C
10
0.1
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
1.5
RDS(on) , Drain-to-Source On Resistance
ID = 84A
VGS = 4.5V
ID, Drain-to-Source Current
(Α
)
T J = 25°C
100
T J = 175°C
10
(Normalized)
1.0
1
0
1.0
2.0
3.0
VDS = 5.0V
20µs PULSE WIDTH
4.0
5.0
6.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRLR/U3802
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + C , Cds SHORTED
gs
gd
Crss = C
gd
Coss
= C +C
ds
gd
12
ID= 6.0A
VGS , Gate-to-Source Voltage (V)
VDS = 12V
10
8
6
4
2
0
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
100
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY RDS (on)
100.0
T J = 175°C
10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
100
10msec
1.0
T J = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLR/U3802
L
D
V
DS
100
LIMITED BY PACKAGE
80
ID , Drain Current (A)
D.U.T
V
DD
60
V
GS
Pulse Width < 1µs
Duty Factor < 0.1%
40
Fig 10a.
Switching Time Test Circuit
20
V
DS
90%
25
50
75
100
125
150
175
0
T C , Case Temperature (°C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
f
t
d(off)
t
r
Fig 10b.
Switching Time Waveforms
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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