arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
03/24/04
1
IS65C256
PIN CONFIGURATION
32-Pin SOP
ISSI
PIN CONFIGURATION
32-Pin TSOP (Type 1)
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
DD
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
®
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
OE
A11
A9
A8
A13
WE
V
DD
A14
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PIN DESCRIPTIONS
A0-A14
CS
OE
WE
I/O0-I/O7
V
DD
GND
Address Inputs
Chip Select Input
Output Enable Input
Write Enable Input
Input/Output
Power
Ground
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE
X
H
H
L
CS
H
L
L
L
OE
I/O Operation
X
H
L
X
High-Z
High-Z
D
OUT
D
IN
V
DD
Current
I
SB
1
, I
SB
2
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–55 to +125
–65 to +150
Unit
V
°C
°C
W
mA
0.5
20
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
03/24/04
IS65C256
OPERATING RANGE
Range
A1
A2
A3
Ambient Temperature
–40°C to +85°C
–40°C to +105°C
–40°C to +125°C
V
DD
5V ± 10%
5V ± 10%
5V ± 10%
ISSI
®
DC ELECTRICAL CHARACTERISTICS
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
DD
= Min., I
OH
= –1.0 mA
V
DD
= Min., I
OL
= 2.1 mA
Min.
2.4
—
2.2
–0.3
–10
–10
Max.
—
0.4
V
DD
+ 0.5
0.8
10
10
Unit
V
V
V
V
µA
µA
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
,
Outputs Disabled
Note:
1. V
IL
= –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC
1
Parameter
V
DD
Operating
Supply Current
V
DD
Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
DD
= Max.,
CS
= V
IL
I
OUT
= 0 mA, f = 0
V
DD
= Max.,
CS
= V
IL
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS
= V
IH
, f = 0
V
DD
= Max.,
CS
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Min.
—
—
—
—
—
—
—
—
—
—
—
—
-20 ns
typ
(2)
Max.
40
50
60
25
95
25 105
25 115
5
10
10
0.5
1.0
1.5
Unit
mA
I
CC
2
I
SB
1
I
SB
2
A1
A2
A3
A1
A2
A3
A1
A2
A3
A1
A2
A3
mA
mA
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 5V, T
A
= 25
o
C, t
AA
= 70 ns, and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
03/24/04
3
IS65C256
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
10
Unit
pF
pF
ISSI
®
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 5.0V.
DATA RETENTION CHARACTERISTICS
Symbol
V
DR
I
DR
1
I
DR
2
I
DR
3
Parameter
V
DD
for retention of data
Data retention current
Data retention current
Data retention current
Test Conditions
V
DR
= 3.0V
V
DR
= 3.0V
V
DR
= 3.0V
Options
A1
A2
A3
Min.
2.0
—
—
—
typ
(1)
50
50
50
Max.
—
150
300
500
Units
V
µA
µA
µA
Note:
2. Typical values are measured at V
DD
= 3V, T
A
= 25
o
C, and not 100% tested.
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-20 ns
Symbol
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CS
Access Time
OE
Access Time
OE
to Low-Z Output
OE
to High-Z Output
CS
to Low-Z Output
CS
to High-Z Output
CS
to Power-Up
CS
to Power-Down
Min.
20
—
3
—
—
0
0
3
0
0
—
Max.
—
20
—
20
8
—
9
—
9
—
18
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RC
t
AA
t
OHA
t
ACS
t
DOE
t
LZOE
(2)
t
HZOE
(2)
t
LZCS
(2)
t
HZCS
(2)
t
PU
(3)
t
PD
(3)
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
03/24/04
IS65C256
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Levels
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
ISSI
®
AC TEST LOADS
480
Ω
5V
5V
480
Ω
OUTPUT
100 pF
Including
jig and
scope
Figure 1.
OUTPUT
255
Ω
5 pF
Including
jig and
scope
255
Ω
Figure 2.
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
t
RC
ADDRESS
t
AA
t
OHA
D
OUT
PREVIOUS DATA VALID
t
OHA
DATA VALID
READ1.eps
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