ISP521-1X, ISP521-2X, ISP521-4X
ISP521-1, ISP521-2, ISP521-4
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
l
UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l
VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
l
Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P96102022
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
ISP521-1X
ISP521-1
2.54
7.0
6.0
1
2
Dimensions in mm
4
3
1.2
5.08
4.08
7.62
4.0
3.0
0.5
3.0
13°
Max
0.26
DESCRIPTION
2.54
The ISP521-1 , ISP521-2 , ISP521-4 series of
1
optically coupled isolators consist of infrared
2
light emitting diodes and NPN silicon photo
7.0
3
transistors in space efficient dual in line plastic
6.0
4
packages.
1.2
FEATURES
10.16
l
Options :-
7.62
9.16
10mm lead spread - add G after part no.
4.0
3.0
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
0.5
l
High Current Transfer Ratio ( 50% min)
3.0
0.26
l
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
3.35
l
High BV
CEO
( 55Vmin )
0.5
1
l
All electrical parameters 100% tested
l
Custom electrical selections available
ISP521-4X
2
APPLICATIONS
ISP521-4
3
l
Computer terminals
4
2.54
l
Industrial systems controllers
l
Measuring instruments
5
l
Signal transmission between systems of
6
7.0
different potentials and impedances
6.0
OPTION SM
SURFACE MOUNT
OPTION G
7.62
1.2
20.32
19.32
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
3.0
0.5 3.35
4.0
3.0
0.5
0.26
7
8
ISP521-2X
ISP521-2
0.5
3.35
8
7
6
5
13°
Max
16
15
14
13
12
11
10
9
7.62
13°
Max
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92252m-AAS/A2
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
5V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
(derate linearly 2.67mW/°C above 25°C)
55V
6V
150mW
200mW
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
MIN TYP MAX UNITS
1.0
5
1.15
1.3
10
V
V
µ
A
V
V
nA
TEST CONDITION
I
F
= 10mA
I
R
= 10
µ
A
V
R
= 5V
I
C
= 0.5mA
I
E
= 100
µ
A
V
CE
= 24V
5mA I
F
, 5V V
CE
1mA I
F
, 0.4V V
CE
8mA I
F
, 2.4mA I
C
1mA I
F
, 0.2mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 10V ,
I
C
= 2mA, R
L
= 100
Ω
Output
Collector-emitter Breakdown (BV
CEO
)
55
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (Note 2)
ISP521-1, ISP521-2, ISP521-4
CTR selection available
BL
GB
GB
50
200
100
30
100
Coupled
600
600
600
%
%
%
%
V
V
V
RMS
V
PK
Ω
µ
s
µ
s
µ
s
µ
s
Collector-emitter Saturation VoltageV
CE (SAT)
-GB
Input to Output Isolation Voltage V
ISO
5300
7500
Input-output Isolation Resistance R
ISO
5x10
10
Rise Time
tr
Fall Time
tf
Turn-on Time
ton
Turn-off Time
toff
0.4
0.4
2
3
3
3
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/12/00
DB92252m-AAS/A2
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
25
Collector current I
C
(mA)
150
20
15
10
5
0
-30
0
25
50
75
100
125
0
Collector Current vs. Low
Collector-emitter Voltage
T
A
= 25°C
50
40
30
20
10
5
I
F
= 2mA
100
50
0
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
0.2
0.4
0.6
0.8
1.0
Collector-emitter voltage V
CE
( V )
Collector Current vs. Collector-emitter Voltage
50
50
30
Collector current I
C
(mA)
40
30
20
10
0
20
15
10
T
A
= 25°C
50
Forward current I
F
(mA)
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
I
F
= 5mA
I
C
= 1mA
Current transfer ratio CTR (%)
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
7/12/00
I
F
= 5mA
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Current Transfer Ratio vs. Forward Current
320
280
240
200
160
120
80
40
0
1
2
5
10
20
50
Forward current I
F
(mA)
DB92252m-AAS/A2
Collector-emitter saturation voltage V
CE(SAT)
(V)
V
CE
= 5V
T
A
= 25°C
Embedded System
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