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2SD1164-Z-E1

Description
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, MP-3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size106KB,3 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SD1164-Z-E1 Overview

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, MP-3, 3 PIN

2SD1164-Z-E1 Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 50
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage60 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)2000
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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