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40MT120UH

Description
HALF-BRIDGE IGBT MTP UltraFast NPT IGBT
CategoryDiscrete semiconductor    The transistor   
File Size668KB,13 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

40MT120UH Overview

HALF-BRIDGE IGBT MTP UltraFast NPT IGBT

40MT120UH Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-XUFM-P13
Contacts13
Reach Compliance Codeunknow
Other featuresUL APPROVED
Shell connectionISOLATED
Maximum collector current (IC)80 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-P13
Number of components2
Number of terminals13
Maximum operating temperature125 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)800 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
I27126 rev. C 02/03
40MT120UH
"HALF-BRIDGE" IGBT MTP
Features
Technology
• Positive V
CE(ON)
Temperature Coefficient
• 10µs Short Circuit Capability
• HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
• Low Diode V
F
• Square RBSOA
• Aluminum Nitride DBC
• Optional SMT Thermistor (NTC)
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved (file E78996)
UltraFast Non Punch Through (NPT)
UltraFast NPT IGBT
V
CES
= 1200V
I
C
= 80A
T
C
= 25°C
Benefits
Applications
• Rugged with UltraFast Performance
• Benchmark Efficiency above 20KHz
• Outstanding ZVS and Hard Switching
Operation
• Low EMI, requires Less Snubbing
• Excellent Current Sharing in Parallel
Operation
• Direct Mounting to Heatsink
• PCB Solderable Terminals
Optimized for Welding, UPS and SMPS
MMTP
Absolute Maximum Ratings
Parameters
V
CES
I
I
I
I
I
C
Max
1200
@ T
C
= 25°C
@ T
C
= 105°C
80
40
160
160
@ T
C
= 105°C
21
160
± 20
2500
463
185
@ T
C
= 25°C
@ T
C
= 100°C
Units
V
A
Collector-to-Emitter Breakdown Voltage
Continuos Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT)
CM
LM
F
FM
V
GE
V
ISOL
P
D
V
W
www.irf.com
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