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CMPT5551

Description
NPN SILICON TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size43KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

CMPT5551 Overview

NPN SILICON TRANSISTOR

CMPT5551 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
CMPT5551
NPN SILICON TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
SOT-23 CASE
MAXIMUM RATINGS
(TA=25
o
C)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ
JA
The CENTRAL SEMICONDUCTOR
CMPT5551 type is an NPN silicon transistor
manufactured bythe epitaxial planar process,
epoxy molded in a surface mount package,
designed for high voltage amplifier
applications.
Marking Code is 1FF.
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
180
160
6.0
600
350
-65 to +150
357
UNITS
V
V
V
mA
mW
o
C
o
C/W
ELECTRICAL CHARACTERISTICS
(TA=25
o
C unless otherwise noted)
SYMBOL
ICBO
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
TEST CONDITIONS
VCB=120V
VCB=120V, TA=100
o
C
IC=100µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
MIN
MAX
50
50
UNITS
nA
µ
A
V
V
V
V
V
V
V
180
160
6.0
0.15
0.20
1.00
1.00
80
80
30
100
250
300
6.0
MHz
pF
186
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