CMPT591E datasheet, PDF - EEWORLD Datasheet

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CMPT591E: DescriptionSURFACE MOUNT PNP SILICON TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size100KB，2 Pages; ManufacturerCentral Semiconductor

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CMPT591E Overview

SURFACE MOUNT PNP SILICON TRANSISTOR

CMPT591E Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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CMPT591E

SURFACE MOUNT

PNP SILICON TRANSISTOR

Central

DESCRIPTION:

TM

Semiconductor Corp.

The CENTRAL SEMICONDUCTOR CMPT591E

type is a PNP silicon transistor manufactured by

the epitaxial planar process, epoxy molded in a

surface mount package, designed for high

current, general purpose amplifier applications.

Marking Code is C59.

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

IC

Base Current

IB

Collector Current (Peak)

ICM

Power Dissipation

PD

Operating and Storage

Junction Temperature

TJ,Tstg

Θ

JA

Thermal Resistance

80

60

5.0

1.0

200

2.0

350

-65 to +150

357

UNITS

V

A

mA

A

mW

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

fT

Cob

TEST CONDITIONS

VCB=60V

VEB=4.0V

IC=100µA

IC=10mA

IE=100µA

IC=500mA, IB=50mA

IC=1.0A, IB=100mA

VCE=5.0V, IC=1.0A

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=500mA

VCE=5.0V, IC=1.0A

VCE=5.0V, IC=2.0A

VCE=10V, IC=50mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

MIN

MAX

100

UNITS

nA

V

80

60

5.0

0.20

0.40

1.1

1.0

200

50

15

150

600

10

MHz

pF

R2 ( 30-August 2001)

CMPT591E Related Products

	CMPT591E	CMPT591
Description	SURFACE MOUNT PNP SILICON TRANSISTOR	SURFACE MOUNT PNP SILICON TRANSISTOR

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