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CMPT651

Description
SURFACE MOUNT NPN HIGH CURRENT TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size103KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

CMPT651 Overview

SURFACE MOUNT NPN HIGH CURRENT TRANSISTOR

CMPT651 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)75 MHz
CMPT651
SURFACE MOUNT
NPN HIGH CURRENT TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT651
type is a high current NPN Silicon Transistor,
epoxy molded in a space saving Power SOT-
23F surface mount package, designed for high
current applications.
Marking code is
C651.
SOT-23F CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ
JA
UNITS
V
V
V
A
mW
°C
°C/W
80
60
5.0
2.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
TEST CONDITIONS
VCB=80V
VEB=4.0V
IC=100µA
IC=10mA
IE=10µA
IC=0.5A, IB=50mA
IC=1.0A, IB=100mA
IC=2.0A,
IC=1.0A,
IB=200mA
IB=100mA
75
100
75
40
75
MHz
R0 ( 03-January 2002)
300
80
60
5.0
100
200
400
1.2
1.0
MIN
MAX
100
100
UNITS
nA
nA
V
V
V
mV
mV
mV
V
V
VCE=2.0V, IC=1.0A
VCE=2.0V, IC=50mA
VCE=2.0V, IC=500mA
VCE=2.0V, IC=1.0A
VCE=2.0V, IC=2.0A
VCE=5.0V, IC=50mA, f=100MHz
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