CMPT7090L datasheet, PDF - EEWORLD Datasheet

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CMPT7090L: DescriptionSURFACE MOUNT LOW VCE(SAT) PNP POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size102KB，2 Pages; ManufacturerCentral Semiconductor

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CMPT7090L Overview

SURFACE MOUNT LOW VCE(SAT) PNP POWER TRANSISTOR

CMPT7090L Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	150
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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CMPT7090L

SURFACE MOUNT

LOW VCE(SAT)

PNP POWER TRANSISTOR

Central

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT7090L

is a Low VCE(SAT) PNP Transistor in a space

saving Power SOT-23F surface mount package,

designed for DC-DC converters for mobile

systems and LAN cards, motor control, power

management and strobe flash units.

Marking code is

709L.

SOT-23F CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

ICM

TJ,Tstg

5.0

3.0

6.0

350

-65 to +150

357

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

ICBO

VCB=30V

ICBO

VCB=30V, TA=100°C

IEBO

VEB=4.0V

IC=100µA

BVCBO

BVCEO

IC=10mA

BVEBO

IE=100µA

5.0

VCE(SAT)

IC=500mA, IB=5.0mA

100

VCE(SAT)

IC=1.0A, IB=10mA

175

VCE(SAT)

IC=2.0A, IB=50mA

250

VBE(SAT)

IC=1.0A, IB=10mA

0.8

hFE

VCE=2.0V, IC=10mA

300

hFE

VCE=2.0V, IC=500mA

250

hFE

VCE=2.0V, IC=1.0A

200

hFE

VCE=2.0V, IC=2.0A

150

VCE=5V, IC=50mA, f=50MHz

100

MAX

100

250

450

750

1.0

800

UNITS

µA

MHz

R0 ( 13-December 2001)

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