EEWORLDEEWORLDEEWORLD

Part Number

Search

ASIMS2441

Description
L BAND, Si, NPN, RF POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size49KB,3 Pages
ManufacturerASI [ASI Semiconductor, Inc]
Download Datasheet Parametric Compare View All

ASIMS2441 Overview

L BAND, Si, NPN, RF POWER TRANSISTOR

ASIMS2441 Parametric

Parameter NameAttribute value
Number of terminals2
Transistor polarityNPN
Maximum collector current22 A
Processing package description0.400 X 0.500 INCH, HERMETIC SEALED, M112, 2 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
surface mountYes
Terminal formFLAT
terminal coatingTIN LEAD
Terminal locationDUAL
Packaging MaterialsCERAMIC, METAL-SEALED COFIRED
structureSINGLE
Shell connectionBASE
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Transistor typeRF POWER
highest frequency bandL BAND
MS2441
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MS2441
is a silicon NPN power
transistor, designed for high power and
low duty cycle DME and IFF applications.
PACKAGE STYLE .400 2L FLG (A)
4x .062 x 45°
2xB
A
.040 x 45°
C
F
E
FEATURES:
Internal Input/Output Matching Networks
P
G
= 6.5 dB at 400 W/1150 MHz
Omnigold™
Metalization System
DIM
D
G
H
J
K
P
2xR
I
L
N
M
M IN IM UM
inches / m m
M A XIM UM
inches / m m
MAXIMUM RATINGS
I
C
V
CBO
V
CES
P
DISS
T
J
T
STG
θ
JC
22 A
65 V
65 V
1458 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.12 °C/W
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
.135 / 3.43
.100 / 2.54
.050 / 1.27
.376 / 9.55
.110 / 2.79
.395 / 10.03
.193 / 4.90
.490 / 12.45
.100 / 2.54
.690 / 17.53
.890 / 22.61
.003 / 0.08
.052 / 1.32
.118 / 3.00
.145 / 3.68
.120 / 3.05
.396 / 10.06
.130 / 3.30
.407 / 10.34
.510 / 12.95
.710 / 18.03
.910 / 23.11
.006 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
COMMON BASE CONFIGURATION
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
EBO
I
CES
h
FE
P
G
η
C
I
C
= 25 mA
I
C
= 50 mA
I
E
= 10 mA
V
CE
= 50 V
V
CE
= 5.0 V
V
CC
= 50 V
P
IN
= 90 W
T
C
= 25 °C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
65
3.5
25
UNITS
V
V
V
mA
---
dB
%
I
C
= 0.25 A
P
OUT
= 400 W
f = 1025 - 1150 MHz
10
6.5
40
200
Pulse Width = 10 µsec, Duty Cycle = 1 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/3

ASIMS2441 Related Products

ASIMS2441 MS2441
Description L BAND, Si, NPN, RF POWER TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR
Number of terminals 2 2
Transistor polarity NPN NPN
Maximum collector current 22 A 22 A
Processing package description 0.400 X 0.500 INCH, HERMETIC SEALED, M112, 2 PIN 0.400 X 0.500 INCH, HERMETIC SEALED, M112, 2 PIN
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT
surface mount Yes Yes
Terminal form FLAT FLAT
terminal coating TIN LEAD TIN LEAD
Terminal location DUAL DUAL
Packaging Materials CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
structure SINGLE SINGLE
Shell connection BASE BASE
Number of components 1 1
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Transistor type RF POWER RF POWER
highest frequency band L BAND L BAND

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2008  2302  363  2424  1528  41  47  8  49  31 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号