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CMSD4448

Description
SUPER-MINI HIGH SPEED SWITCHING DIODE
CategoryDiscrete semiconductor    diode   
File Size51KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

CMSD4448 Overview

SUPER-MINI HIGH SPEED SWITCHING DIODE

CMSD4448 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionR-PDSO-G3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.72 V
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Maximum non-repetitive peak forward current4 A
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
CMSD4448
SUPER-MINI
HIGH SPEED
SWITCHING DIODE
Central
DESCRIPTION:
TM
Semiconductor Corp.
SUPER
mini
TM
The
CENTRAL
SEMICONDUCTOR
CMSD4448 type is a ultra-high speed silicon
switching diode manufactured by the epitaxial
planar process, in an epoxy molded super-
mini surface mount package, designed for
high speed switching applications.
SOT-323 CASE
MAXIMUM RATINGS:
(TA=25
o
C)
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ,Tstg
Θ
JA
UNITS
V
V
mA
mA
mA
mA
mW
o
C
o
C/W
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1
µsec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
75
100
250
250
4000
1000
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS:
(TA=25
o
C unless otherwise noted)
SYMBOL
VBR
VBR
IR
VF
VF
CT
trr
TEST CONDITIONS
MIN
IR=5.0µA
75
IR=100µA
100
VR=20V
IF=5.0mA
0.62
IF=100mA
VR=0, f=1 MHz
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
MAX
UNITS
V
V
nA
V
V
pF
ns
25
0.72
1.0
4.0
4.0
236

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