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3N254

Description
rectifier bridge 100v 2A kbpm
CategoryDiscrete semiconductor    diode   
File Size101KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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3N254 Overview

rectifier bridge 100v 2A kbpm

3N254 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PSIP-W4
Contacts4
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage100 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSIP-W4
JESD-609 codee3
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Maximum power dissipation4.7 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
Base Number Matches1
2KBP005M/3N253 - 2KBP10M/3N259 — Bridge Rectifiers
November 2010
2KBP005M/3N253 - 2KBP10M/3N259
Bridge Rectifiers
Features
• Surge overload rating: 60 amperes peak.
• Reliable low cost construction utilizing molded plastic technique.
• UL certified, UL #E111753.
+
~ ~ _
KBPM
* The nodules on the package may not be present on the actual parts.
Absolute Maximum Ratings *
Symbol
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
T
STG
T
J
T
a
= 25°C unless otherwise noted
Value
Parameter
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
(Rated V
R
)
Average Rectified Forward Current,
@ T
A
= 50°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half-Sine-Wave
Storage Temperature Range
Junction Temperature
005M 01M 02M 04M 06M 08M 10M
253
50
35
50
Units
V
V
V
A
A
°C
°C
254
100
70
100
255
200
140
200
256
400
280
400
2.0
60
257
600
420
600
258
800
560
800
259
1000
700
1000
-55 to +150
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient, * per leg
Parameter
Value
4.7
18
Units
W
°C/W
* Device mounted on PCB with 0.47
×
0.47” (12
×
12mm).
© 2010 Fairchild Semiconductor Corporation
2KBP005M/3N253 - 2KBP10M/3N259 Rev. E2
1
www.fairchildsemi.com

3N254 Related Products

3N254 3N257
Description rectifier bridge 100v 2A kbpm rectifier bridge 600v 2A kbpm
Is it Rohs certified? conform to conform to
package instruction R-PSIP-W4 R-PSIP-W4
Contacts 4 4
Reach Compliance Code _compli _compli
Other features UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage 100 V 600 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V
JESD-30 code R-PSIP-W4 R-PSIP-W4
JESD-609 code e3 e3
Maximum non-repetitive peak forward current 60 A 60 A
Number of components 4 4
Phase 1 1
Number of terminals 4 4
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT APPLICABLE NOT APPLICABLE
Maximum power dissipation 4.7 W 4.7 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 100 V 600 V
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form WIRE WIRE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT APPLICABLE NOT APPLICABLE
Base Number Matches 1 1

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