6-Line EMI Filter with Integrated ESD Protection
AOZ8015
General Description
The AOZ8015 is a 6-line device integrating EMI filtering
with ESD protection for each line. It is designed to
suppress unwanted EMI/RFI signals and provide electro-
static discharge (ESD) protection in portable electronic
equipment. This state-of-the-art device utilizes AOS
leading edge Trench Vertical Structure [TVS]
2
™
technology for superior clamping performance and filter
attenuation over the full operating display range. The
AOZ8015 has been optimized for protection of color LCD
displays and CCD camera lines in cellular phones and
other portable consumer electronic devices.
The AOZ8015 consists of six identical circuits
comprised of TVS diodes for ESD protection, and a
resistor–capacitor network for EMI/RFI filtering.
A series resistor value of 100
Ω
and a capacitance
value of 20pF are used to achieve -30dB minimum
attenuation from 800MHz to 3.0GHz. The TVS diodes
provide effective suppression of ESD voltages in excess
of ±17kV (air discharge) and ±17kV (contact discharge).
This exceeds IEC 61000-4-2, level 4 ESD immunity test.
The AOZ8015 comes in an RoHS compliant, 1.35mm x
3.0mm DFN package and is rated over a -40°C to +85°C
ambient temperature range.
Features
●
6 lines for EMI filtering and ESD protection:
–
Exceeds IEC 61000-4-2, level 4 (ESD) immunity test
–
±17kV (air discharge) and ±17kV (contact discharge)
●
Trench Vertical Structure [TVS]
2
™ based technology
used to achieve excellent ESD clamping & filter
performance over the full operating display range
Filter performance: -30db attenuation from 800MHz to
3.0GHz
Low operating voltage: 5.0V
Capacitance stability over wide range of voltages and
temperatures
DFN package 1.35mm x 3.0mm
Pb-Free device
Greeen product
●
●
●
●
●
●
Applications
●
●
●
EMI filtering and ESD protection for data lines
LCD displays, camera interface, I/O interface
Portable handheld devices, cell phones, PDA phones
Electrical Schematic
(each channel)
CHn
(n = 1–6)
20pF
100Ω
20pF
GND
Figure 1.
Rev. 2.0 July 2009
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Page 1 of 7
AOZ8015
Absolute Maximum Ratings
Exceeding the Absolute Maximum ratings may damage the device.
Parameter
Storage Temperature (T
S
)
ESD Rating per IEC61000-4-2, contact
(1)
ESD Rating per IEC61000-4-2, air
(1)
ESD Rating per Human Body Model
(2)
Notes:
1. IEC 61000-4-2 discharge with C
Discharge
= 150pF, R
Discharge
= 330
Ω
.
2. Human Body Discharge per MIL-STD-883, Method 3015 C
Discharge
= 100pF, R
Discharge
= 1.5k
Ω
.
Rating
-65°C to +150°C
±17kV
±17kV
±30kV
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Symbol
V
RWM
V
BR
I
R
V
CL
R
CH
C
CH
f
C
Parameter
Reverse Working Voltage
Reverse Breakdown Volt-
age
Reverse Leakage Current
Signal Clamp Voltage
Total Series Resistance
Channel Capacitance
Cut-off Frequency
Attenuation from 800MHz
to 3.0GHz
(3)(8)
Conditions
I
T
= 1mA
(4)
V
RWM
= 3.3V
I
LOAD
= 12A, positive clamp
(5)(8)
I
LOAD
= 12A, negative clamp
(5)(8)
I
R
= 20mA
Input to Ground
(6)(7)(8)
Measured with 50
Ω
source and 50
Ω
load
termination
Measured with 50
Ω
source and 50
Ω
load
termination
Min.
6
Typ.
7
Max.
5.0
8
0.1
11
-10
Units
V
V
µA
V
90
18
100
20
100
-30
110
22
Ω
pF
MHz
dB
Notes:
3. The working peak reverse voltage, V
RWM
, should be equal to or greater than the DC or continuous peak operating voltage level.
4. V
BR
is measured at the pulse test current I
T
.
5. Measurements performed using a 100ns Transmission Line Pulse (TLP) system.
6. Total capacitance is equal to 2 x C
CH
.
7. Measured at 25°C, V
R
= 2.5V, f = 1.0MHz.
8. Guaranteed by design.
Rev. 2.0 July 2009
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Page 3 of 7
AOZ8015
Typical Performance Characteristics
Insertion Loss Characteristics
0
-5
-10
@ 0V Bias
@ 5V Bias
23
22
Typical Line Capacitance vs.
Reverse Bias Voltage
S21 (db)
-20
-25
-30
-35
-40
-45
-50
1
10
100
Frequency (MHz)
1000
10000
Capacitance (pF)
-15
21
20
19
18
1
2
3
4
5
Reverse Biased Voltage (V)
Analog Crosstalk
0
12
11
Clamping Voltage vs. Peak Pulse Current
-20
S21 (db)
-40
Forward Voltage (V)
10
9
8
7
6
5
-60
-80
-100
1
10
100
Frequency (MHz)
1000
10000
0
2
4
6
Current (A)
8
10
12
Forward Voltage vs. Forward Current
12
10
110
Typical Resistance vs. Temperature
Forward Voltage (V)
105
Resistance (Ω)
0
2
4
6
8
10
12
8
6
4
2
0
100
95
90
-45
-25
-5
5
25
45
65
85
Forward Current (A)
Temperature (°C)
Rev. 2.0 July 2009
www.aosmd.com
Page 4 of 7
AOZ8015
Package Dimensions, DFN 3.0 x 1.35A_12L
0.15 C
D
F
12
D1
L
7
8
9
10
11
12
0.15 C
C B
L
E
E1
6
5
4
3
2
1
1
Pin 1
Marking
Pin 1 ID
(C0.2x45°)
A
C
L
e
b
TOP VIEW
BOTTOM VIEW
0.10 C
A
0.08 C
Dimensions in millimeters
Symbols
A
A1
A3
b
D
D1
E
Min.
0.50
0.00
Nom.
0.55
—
Max.
0.60
0.05
Dimensions in inches
Symbols
A
A1
A3
b
D
D1
E
E1
e
L
F
Min.
0.020
0.000
Nom.
0.022
—
Max.
0.024
0.002
SIDE VIEW
A1 A3 C
0.152 REF
0.20
0.25
0.30
2.95
2.15
1.30
0.25
0.20
3.00
2.20
1.35
3.05
2.25
1.40
0.006 REF
0.008 0.010 0.012
0.116
0.085
0.051
0.010
0.008
0.118
0.087
0.053
0.120
0.089
0.055
RECOMMENDED LAND PATTERN
2.20
0.20
0.30
E1
e
L
F
0.30
0.35
0.50 BSC
0.25
0.35
0.20 REF
0.012 0.014
0.020 BSC
0.010 0.012
0.008 REF
0.30
1.15
0.50
0.25
0.25
UNIT: mm
Notes:
1. All dimensions are in millimeters. Angles is degree.
2. Coplanarity applies to the exposed pad as well as the terminals. Coplanarity shall not exceed 0.08mm.
3. Warpage shall not exceed 0.10mm.
4. Package length/package width are not considered as special characteristic.
5. Refer JEDEC MO-229.
6. Marking is for package orientation reference only.
Rev. 2.0 July 2009
www.aosmd.com
Page 5 of 7
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