This product complies with the RoHS Directive (EU 2002/95/EC).
Transmissive Photosensors (Photo lnterrupters)
CNZ1120
(ON1120)
Photo lnterrupter
For contactless SW and object detection
Overview
CNZ1120 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high
sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing
between them are detected.
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Power dissipation
*1
Forward current
Reverse voltage
Input
(Light emitting diode)
Collector-emitter voltage
(Base open)
Emitter-collector voltage
(Base open)
Collector current
Output
(Photo transistor)
Reverse current
Input
characteristics Forward voltage
Ma
int
en
Parameter
an
Electrical-Optical Characteristics
T
a
= 25°C±3°C
I
R
ce
/D
*2: Output power derating ratio is 2.50 mW/°C at T
a
≥
25°C.
isc
Note) *1: Input power derating ratio is 1.88 mW/°C at T
a
≥
25°C.
on
tin
Storage temperature
ue
Operating ambient temperature
di
Collector power dissipation
*2
Symbol
V
F
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Symbol
P
D
I
F
Rating
75
50
3
Unit
mA
V
V
V
mW
V
R
V
CEO
V
ECO
I
C
20
5
20
mA
°C
°C
P
C
100
mW
T
opr
T
stg
–5 to +60
–15 to +65
Conditions
Min
Typ
1.2
Max
10
1.5
V
R
= 3 V
I
F
= 50 mA
I
CEO
I
C
V
CE
= 10 V, I
F
= 0 mA, I
D
= 0 mA
(No background light)
I
F
= 50 mA, I
C
= 0.1 mA
V
CC
= 10 V, I
C
= 1 mA,
R
L
= 100
W
6
6
200
M
ain
Di
sc te
on na
tin nc
ue e/
d
Features
Output
Collector-emitter cutoff current
characteristics (Base open)
Collector current
Collector-emitter saturation voltage
Transfer
characteristics Rise time
*
Fall time
*
Note) 1. Input and output are practiced by electricity.
2. This device is designed by disregarding radiation.
3. *: Switching time measurement circuit
Wide gap between emitting and detecting elements, suitable for thick plate detection
Gap: 10 mm
Fast response: t
r
, t
f
= 6
μs
(typ.)
The external case is molded using visible light cutoff resin. The case has no openings, so the photosensor is not easily susceptible to output
attenuation resulting from dust or particles
Unit
μA
V
nA
mA
Pl
V
CC
= 10 V I
F
= 20 mA, R
L
= 100
W
,
1.0
0.4
200
200
V
CE(sat)
t
r
t
f
V
μs
μs
Sig. in
V
CC
Sig. out
(Input pulse)
(Output pulse)
t
r
t
f
90%
10%
t
r
: Rise time
t
f
: Fall time
50
Ω
R
L
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2009
SHG00032DED
1
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semiconductors described in this book
(1)
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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–
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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