2N4393 datasheet, PDF - EEWORLD Datasheet

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2N4393: DescriptionSmall Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size97KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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2N4393 Overview

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN

2N4393 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Advanced Semiconductor, Inc.
Parts packaging code	BCY
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknown
FET technology	JUNCTION
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.8 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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JUNCTION FET

Item

Number

Part Number

Manufacturer

V(BR)GSS

IDSS

g,.

Min (S) Max

VGS(Off)

(V)

(A)

Max

(V)

lass

Max

(A)

C

lsa

Max

(F)

PD

Max

(W)

Derate

at

(WrC)

Toper

Max

(OC)

Package

Style

N-Channel JFETs,

(Cont'd)

2SK364

2SK366

2SK240

2SK431

2SK170

UC704

2SK194

ITE4091

ITE4091A

J111A

KE4393

MPF4091

PMBF4393

PN'4091 ,-

SMPJ111A

SMPU1897

SMP3972

SMP4091

SMP4393

SOR4091 (A)

SOR4393 (A)

504393

ToshibaCorp

Hitachi Ltd

ToshibaCorp

Solitron

NECElecslnc

NEC Corp JA

GEllntersil

GEllntersii

Natl Semi

Interfet

Siliconix

SprgueElec

Semi Inc

Natl Semi

Motorola

PhilipsElec

Telefunken

AmpereXl:.leC

See Index

Interfet

ThmsnCSFEFC

!nmsn~t-I:.t-(.;

5

10

40

:8

40

:8

40

:+~:~~~

-

15

20

25

30

20m

24m

30m

12m

15m

18m

22m

1.0m

40m

28m

22m

21m

10m

45m

1.5

8.0

1.2

10

3.0

10

3.0

10

3.0

10

3.0

10

3.0

10

3.0

3

10

3.0

10

3.0

10

3.0

1U

10

3.0

10

;.8

10

3.0

1.0n

10n

1.0n

500p

1.0n

100p

100D

100p

200p

1.0n

LOn

1.On

200p

1.0n

200p

1.0n

0.1n

_U_.1n

200p

1.0n

400p

1.0n

1.~.m

30p

6.0p

28p

30p

8.0p

55p

16p

16D

14p

16p

14p

16p

14p

16p

25p

16p

28p

26p

16p

25p

16p

25p

1t:SP

16p

16D

400m

200m

400m

150m

400m

300m

400m

360m

350m

250m

360m

4.0m

125

150

125

J

3.3m

3.0m

125 J

135 J

1505

1255

135 J

175 J

,,:;, J

~~8

j

3.5m

TO-92

SPAK

DIP

SOT-23

TO-92

T0-72

DIP

TO-92

T0-92

TO-106

TO-92

SOT-23

~g~:3

TO-236AB

T0-236AB

TO-236AB

T0-236AB

TO-236AB

T0-236

TO-236

T0-236

TO-92

T0-92

TO-92

TO-106

200m

1.6m

~~~~~~71A

-

35

40

TMPFU1897

TMPF3972

TMPF4091

TMPF4393

TPU1897

TP3972

TP4393

U1897

U1897-18

U1897E

2N4091

2N4393

IT550

NPD5564

NPD5565

NPD5566

2N5564

2N5565

2SK371

2SK363

2SK372

2SK146

2SK147

2SK147V

2SK162

BSR56

BSV78

MPF3970

MPF4856

MPF4856A

PN4856

SMP4856A

TMPF4856

TMPF4856A

TP4856

TP4856A

2N4856

SprgueElec

Interfet

SprgueElec

Interfet

SprQueElec

~ntenet

~g~

30m

1~

~~~

150

J

tg:~~~

350m

150 J

t~:8~~

45

50

~~~~j~

55

60

SprgueElec

Interfet

Siliconix

Semi Inc

GEllntersii

Siliconix

Natl Semi

Semi Inc

See Index

GEllntersii

Natl Semi

See Index

~eelndex

:g

40

~g~

30m

40m

50m

:;,um

50m

60m

80m

1.0n

400p

.4n

300p

500p

100p

tg:~~

~8~

~~~

~~~~~;

65

70

~~~~g~

75

80

~~~~~~6

85

-

90

-

95

-

~~fo~5A

DN5564

DN5565

DN5566

DN5567

FN4393

ToshibaCorp

ToshlbaCorp

Indust Mexi

NEC Corp JA

NECElecslnc

Interfet

Natl Semi

See Index

PhilipsElec

AmperexElec

NthAmerSemi

Motorola

Natl Semi

c.;entrallSeml

Interfet

SprgueElec

Interfet

SprgueElec

Interfet

See Index

::;eelndex

Solitron

Siliconix

:g

40

:8

40

4U

40

7.5m

25m

30m

40m

7.5m

7:~m

12m

40m

60m

16p

14p

12p

360m

350m

1.8

650m

325m

~g~

~~~

t~

11~g~

LOn

1.0n

200p

1.0n

250p

1.0n

250p

1.0n

250D

250p

1.0n

100p

2~p

1.2

45m

:g

1.2

2.7

10

11

10

1U

10

75p

55p

12p

5.0p

10p

25p

18p

10p

18p

10p

18p

10p

18p

10p

18p

10p

12p

7p

14p

j~~

~~g~

200m

400m

200m

1.2

600m

400m

225m

350m

310m

360m

350m

3.2

3.3m

3.5m

10m

3.3m

2.2m

135 J

1505

125 J

2005

200 J

150 J

2005

~~8~

tg:~~6

TO-18

TO-71

DIP

TO-71

SPAK

TO-92

SPAK

DIP

T0-92

TO-92

~~~~

125

12m

6.0m

J

t8:~~

~~~

2.5m

1.8m

2.0m

2.8m

2.4m

125 J

l:;'U

150

150 J

200J

200 J

135 J

150 J

+g:j~

SOT-23

TO-18

TO-226M

TO-92

TO-236AB

TO-236

T0-236

TO-92

TO-18

~g~

t8:~~6AB

~g~

2.0m

7.5m

20m

12m

~.g

3

360m

350m

300m

650m

1.8

2.0m

~.um

200 J

1.7m

3.3m

10m

~U2~

2005

+g:j~

TO-71

T0-71

T0-18

855

2N4393 Related Products

	2N4393	2N4856	2N3972
Description	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible
Parts packaging code	BCY	BCY	BCY
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Contacts	3	3	3
Reach Compliance Code	unknown	unknow	unknow
FET technology	JUNCTION	JUNCTION	JUNCTION
JEDEC-95 code	TO-18	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	1.8 W	0.36 W	1.8 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1

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