5962-9561314HYA datasheet, PDF

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5962-9561314HYA: DescriptionStandard SRAM, 512KX8, 15ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32; Categorystorage storage; File Size136KB，17 Pages; ManufacturerMicross; Websitehttps://www.micross.com

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5962-9561314HYA Overview

Standard SRAM, 512KX8, 15ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32

5962-9561314HYA Parametric

Parameter Name	Attribute value
Parts packaging code	DIP
package instruction	DIP,
Contacts	32
Reach Compliance Code	compli
ECCN code	3A001.A.2.C
Maximum access time	15 ns
JESD-30 code	R-CDIP-T32
JESD-609 code	e0
memory density	4194304 bi
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-STD-883
Maximum seat height	7.493 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	15.24 mm
Base Number Matches	1

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SRAM

AS5C4008

512K x 8 SRAM

SRAM MEMORY ARRAY

AVAILABLE AS MILITARY

SPECIFICATION

• SMD 5962-95600

• SMD 5962-95613

• MIL STD-883

PIN ASSIGNMENT

(Top View)

32-Pin DIP (CW), 32-Pin LCC (EC)

32-Pin SOJ (ECJ)

A18

A16

A14

A12

I/O0

I/O1

I/O2

Vss

Vcc

A15

A17

WE\

A13

A11

OE\

A10

CE\

I/O7

I/O6

I/O5

I/O4

I/O3

FEATURES

•

High Speed: 12, 15, 17, 20, 25, 35 and 45ns

High-performance, low power military grade device

Single +5V ±10% power supply

Easy memory expansion with CE\ and OE\ options

All inputs and outputs are TTL-compatible

Ease of upgradability from 1 Meg using the 32 pin

evolutionary version.

OPTIONS

•

Timing

12ns access

15ns access

17ns access

20ns access

25ns access

35ns access

45ns access

•

Operating Temperature Range

Military: -55

C to +125

Industrial: -40

C to +85

•

Packages

Ceramic Dip (600 mil)

Ceramic Flatpack

Ceramic LCC

Ceramic SOJ

• Options

2V data retention/ low power

MARKING

-12

-15

-17

-20

-25

-35

-45

ECJ

No. 112

No. 304

No. 209

No. 502

32-Pin Flat Pack (F)

A18

A16

A14

A12

I/O0

I/O1

I/O2

Vss

Vcc

A15

A17

WE\

A13

A11

OE\

A10

CE\

I/O7

I/O6

I/O5

I/O4

I/O3

NOTE:

Not all combinations of operating temperature, speed, data retention and

low power are necessarily available. Please contact factory for availability of speciﬁc

part number combinations.

GENERAL DESCRIPTION

The AS5C4008 is a 4 megabit monolithic CMOS SRAM, orga-

nized as a 512K x 8.

The evolutionary 32 pin device allows for easy upgrades from

the 1 meg SRAM.

For ﬂexibility in high-speed memory applications, Micross of-

fers chip enable (CE\) and output enable (OE\) capabilities. These

enhancements can place the outputs in High-Z for additional ﬂexibility

in system design.

Writing to these devices is accomplished when write enable

(WE\) and CE\ inputs are both LOW. Reading is accomplished when

WE\ remains HIGH and CE\ and OE\ go LOW. This allows systems

designers to meet low standby power requirements.

All devices operate from a single +5V power supply and all inputs

are fully TTL-Compatible.

AS5C4008

Rev. 6.4 01/10

For more products and information

please visit our web site at

www.micross.com

Micross Components reserves the right to change products or speciﬁcations without notice.

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