BFP182WE6327 datasheet, PDF - EEWORLD Datasheet

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BFP182WE6327: DescriptionUHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size840KB，8 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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BFP182WE6327 Overview

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

BFP182WE6327 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rochester Electronics
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	0.035 A
Collector-based maximum capacity	0.45 pF
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	NOT SPECIFIED
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	COMMERCIAL
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	8000 MHz
Base Number Matches	1

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