Small Signal Field-Effect Transistor, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Reach Compliance Code | unknow |
| Configuration | SEPARATE, 2 ELEMENTS |
| Maximum drain current (Abs) (ID) | 0.05 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-99 |
| JESD-30 code | O-MBCY-W8 |
| Number of components | 2 |
| Number of terminals | 8 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Maximum power dissipation(Abs) | 0.3 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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