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NVTFS6H850NLWFTAG

Description
Single N-Channel Power MOSFET 80V, 64A, 8.6mΩ WDFN8 (Pb−Free, Wettable Flanks), 1500-REEL
CategoryDiscrete semiconductor    The transistor   
File Size123KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NVTFS6H850NLWFTAG Overview

Single N-Channel Power MOSFET 80V, 64A, 8.6mΩ WDFN8 (Pb−Free, Wettable Flanks), 1500-REEL

NVTFS6H850NLWFTAG Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionSMALL OUTLINE, S-PDSO-F5
Manufacturer packaging code511AB
Reach Compliance Codecompliant
Factory Lead Time7 weeks
Avalanche Energy Efficiency Rating (Eas)208 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (Abs) (ID)14.8 A
Maximum drain current (ID)14.8 A
Maximum drain-source on-resistance0.011 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)10 pF
JESD-30 codeS-PDSO-F5
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)73 W
Maximum pulsed drain current (IDM)308 A
GuidelineAEC-Q101
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
NVTFS6H850NL
Power MOSFET
Features
80 V, 8.6 mW, 64 A, Single N−Channel
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVTFS6H850NLWF
Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
www.onsemi.com
V
(BR)DSS
80 V
Value
80
±20
64
45
Unit
V
V
A
R
DS(on)
MAX
8.6 mW @ 10 V
11 mW @ 4.5 V
I
D
MAX
64 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 2, 3, 4)
Power Dissipation
R
qJC
(Notes 1, 2, 3)
Continuous Drain
Current R
qJA
(Notes 1, 3, 4)
Power Dissipation
R
qJA
(Notes 1, 3)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
C
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
N−Channel
D (5
8)
73
37
14.8
10.4
3.9
1.9
308
−55
to
+175
61
208
260
W
G (4)
S (1, 2, 3)
A
W
1
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
XXXX
A
Y
WW
G
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
A
°C
A
mJ
°C
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 3.4 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(Note: Microdot may be in either location)
THERMAL RESISTANCE MAXIMUM RATINGS
(Note 1)
Parameter
Junction−to−Case
Steady State (Note 3)
Junction−to−Ambient
Steady State (Note 3)
Symbol
R
qJC
R
qJA
Value
2.0
39
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2018
February, 2019
Rev. 0
1
Publication Order Number:
NVTFS6H850NL/D

NVTFS6H850NLWFTAG Related Products

NVTFS6H850NLWFTAG NVTFS6H850NLTAG
Description Single N-Channel Power MOSFET 80V, 64A, 8.6mΩ WDFN8 (Pb−Free, Wettable Flanks), 1500-REEL Single N-Channel Power MOSFET 80V, 64A, 8.6mΩ WDFN8 (Pb−Free), 1500-REEL
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free
Maker ON Semiconductor ON Semiconductor
package instruction SMALL OUTLINE, S-PDSO-F5 SMALL OUTLINE, S-PDSO-F5
Manufacturer packaging code 511AB 511AB
Reach Compliance Code compliant compliant
Factory Lead Time 7 weeks 5 weeks
Avalanche Energy Efficiency Rating (Eas) 208 mJ 208 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 80 V 80 V
Maximum drain current (Abs) (ID) 14.8 A 14.8 A
Maximum drain current (ID) 14.8 A 14.8 A
Maximum drain-source on-resistance 0.011 Ω 0.011 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 10 pF 10 pF
JESD-30 code S-PDSO-F5 S-PDSO-F5
Number of components 1 1
Number of terminals 5 5
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape SQUARE SQUARE
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 73 W 73 W
Maximum pulsed drain current (IDM) 308 A 308 A
Guideline AEC-Q101 AEC-Q101
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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