Switching Diodes
MA3V175E, MA3V176E
Silicon epitaxial planar type
Unit : mm
For switching circuits
I
Features
•
Short reverse recovery time t
rr
•
Small terminal capacitance, C
t
4.0
±
0.2
I
Absolute Maximum Ratings
T
a
= 25°C
Reverse voltage
(DC)
Peak reverse
voltage
Forward current
(DC)
Peak forward
current
MA3V175E
MA3V176E
MA3V175E
MA3V176E
Single
Double
Single
Double
I
FSM
T
j
T
stg
I
FM
I
F
V
RM
V
R
40
80
40
80
100
150
225
340
500
750
150
−55
to
+150
°C
°C
mA
mA
mA
V
1.27 1.27
2.54
±
0.15
V
1
2
3
1 : Anode
2 : Cathode
3 : Anode
New S-Type Package
Internal Connection
Non-repetitive peak Single
forward surge current
*
Double
Junction temperature
Storage temperature
Note) * : t = 1 s
1
2
3
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
MA3V175E
MA3V176E
Forward voltage (DC)
Reverse voltage (DC)
MA3V175E
MA3V176E
Terminal capacitance
Reverse recovery time
*
C
t
t
rr
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA, V
R
= 6 V
I
rr
= 0.1 · I
R
, R
L
= 100Ω
V
F
V
R
Symbol
I
R
V
R
= 35 V
V
R
= 75 V
I
F
= 100 mA
I
R
= 100
µA
40
80
4
3
pF
ns
Conditions
Min
Typ
Max
0.1
0.1
1.2
V
V
Unit
µA
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
DUT
Input Pulse
t
r
Sampling
Oscilloscope
R
i
=
50
Ω
t
P
10%
90%
t
p
=
100 ns
t
r
=
0.6 ns
δ =
0.05
0
I
F
Output Pulse
t
rr
t
I
rr
=
0.1·I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
I
F
R
s
=
50
Ω
V
=
V
R
+
I
R
·
R
S
2.0
±
0.2
marking
0.45
−
0.1
0.7
±
0.1
+
0.2
Parameter
Symbol
Rating
Unit
15.6
±
0.5
3.0
±
0.2
1
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