VMZ6.8N
Diodes
Zener diode
VMZ6.8N
Applications
Constant voltage control.
External dimensions
(Units : mm)
0.2±0.1
0.8±0.1
1.2±0.1
Construction
Silicon epitaxial planar.
ROHM : VMD3
EIAJ :
−
JEDEC :
−
Absolute maximum ratings
(Ta=25°C)
Parameter
Power dissipation
∗
Junction temperature
Storage temperature
Symbol
P
0.2±0.1
0.32±0.05
Limits
150
150
−55~+150
Unit
mW
˚C
˚C
Tj
Tstg
∗
Total of 2 elements
Electrical characteristics
(Ta=25°C)
Parameter
Zener voltage
Reverse current
Capacitance between terminals
Symbol
V
Z
I
R
C
T
Min.
6.47
−
−
Typ.
−
−
9
Max.
7.14
0.5
−
Unit
V
µA
pF
I
Z
=5mA
V
R
=3.5V
f=1MH
Z
, V
R
=5V
Conditions
Others
Parameter
Device configuration
IEC61000-4-2
Charge / discharge capacitance : 150pF
Discharge resistance
10 repetitions
Judgment contents
No malfunction
Contact
Suspended
:
±8kV
:
±15kV
: 330Ω
6C
(3)
Features
1) Ultra small mold type. (VMD3)
2) Composite type with two anode common elements.
3) High reliability.
0.4
0.4
0.5±0.05
0.22±0.05
(2)
(1)
0.8±0.1
1.2±0.1
0∼0.1
0.13±0.05
Equivalent circuit
1/2
VMZ6.8N
Diodes
Electrical characteristic curves
(Ta=25°C)
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
100m
10m
1m
100µ
10µ
1µ
100n
10n
6.0
1µ
100
REVERSE CURRENT : I
R
(A)
100n
ZENER CURRENT
: I
Z
(A)
10n
10
1n
100p
6.5
7.0
7.5
8.0
10p
0
1
2
3
4
5
6
1
0
1
2
3
4
5
6
ZENER VOLTAGE
: V
Z
(V)
REVERSE VOLTAGE
: V
R
(V)
REVERSE VOLTAGE
: V
R
(V)
Fig.1 Zener current characteristic
Fig.2 Reverse current characteristics
Fig.3 Capacitance between
terminals characteristics
1000
POWER DISSIPATION : PRSM (W)
100
10
1
0.01
0.1
1
10
PULSE TIME
: TIME (mS)
Fig.4 Reverse power disapation
2/2
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