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EAPST2012A1

Description
Photo Transistor,
CategoryLED optoelectronic/LED    photoelectric   
File Size424KB,8 Pages
ManufacturerEVERLIGHT
Websitehttp://www.everlight.com/
Environmental Compliance
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EAPST2012A1 Overview

Photo Transistor,

EAPST2012A1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid8157684845
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time10 weeks
Coll-Emtr Bkdn Voltage-Min30 V
ConfigurationSINGLE
Maximum dark power100 nA
Infrared rangeYES
Nominal photocurrent0.65 mA
Number of functions1
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Optoelectronic device typesPHOTO TRANSISTOR
peak wavelength940 nm
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